Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs
Structure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Pd-n-GaAs are сonsidered. There is measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short circuit, and determined height of the Schottky barrie...
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| Language: | English |
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Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education
2019-06-01
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| Series: | Омский научный вестник |
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| Online Access: | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/3%20(165)/78-83%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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| author | A. I. Blesman R. B. Burlakov |
| author_facet | A. I. Blesman R. B. Burlakov |
| author_sort | A. I. Blesman |
| collection | DOAJ |
| description | Structure and strategy of the fabrication of the photocell
on the base of the Schottky barrier contact Pd-n-GaAs are сonsidered. There is measured I(V)-features of photocells,
their C-V-features, spectrums photovoltage and current of the
short circuit, and determined height of the Schottky barrier
contacts Pd-n-n+-GaAs by photoelectric method. There is
shown that air annealing of structures n-n+-GaAs-AuGe under
(200–210) C within 30 minutes before precipitating a film
Pd on n-GaAs brings: to the reduction on two orders direct
Idir and inverse Iinv currents (under 0,5 V), to reduction on
three orders of density of the current of the saturation J0
,
to reduction of capacities of photocells before values (241–
233) pF under inverse tensions (0,22–0,96) V, reduction of
the current of the short circuit of photocells and to increase
their photovoltage that connected with formation fine
insulator film on n-GaAs under air annealing of structures
n-n+-GaAs-AuGe. |
| format | Article |
| id | doaj-art-e930475325724ba38d502a79293d74ac |
| institution | Kabale University |
| issn | 1813-8225 2541-7541 |
| language | English |
| publishDate | 2019-06-01 |
| publisher | Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education |
| record_format | Article |
| series | Омский научный вестник |
| spelling | doaj-art-e930475325724ba38d502a79293d74ac2025-02-02T22:09:25ZengOmsk State Technical University, Federal State Autonoumos Educational Institution of Higher EducationОмский научный вестник1813-82252541-75412019-06-013 (165)788310.25206/1813-8225-2019-165-78-83Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAsA. I. Blesman0https://orcid.org/0000-0003-2837-3469R. B. Burlakov1Omsk State Technical UniversityDostoevsky Omsk State UniversityStructure and strategy of the fabrication of the photocell on the base of the Schottky barrier contact Pd-n-GaAs are сonsidered. There is measured I(V)-features of photocells, their C-V-features, spectrums photovoltage and current of the short circuit, and determined height of the Schottky barrier contacts Pd-n-n+-GaAs by photoelectric method. There is shown that air annealing of structures n-n+-GaAs-AuGe under (200–210) C within 30 minutes before precipitating a film Pd on n-GaAs brings: to the reduction on two orders direct Idir and inverse Iinv currents (under 0,5 V), to reduction on three orders of density of the current of the saturation J0 , to reduction of capacities of photocells before values (241– 233) pF under inverse tensions (0,22–0,96) V, reduction of the current of the short circuit of photocells and to increase their photovoltage that connected with formation fine insulator film on n-GaAs under air annealing of structures n-n+-GaAs-AuGe.https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/3%20(165)/78-83%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdfmethod of fabricating the photocelln-type gallium arsenideschottky barrier contacts |
| spellingShingle | A. I. Blesman R. B. Burlakov Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs Омский научный вестник method of fabricating the photocell n-type gallium arsenide schottky barrier contacts |
| title | Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs |
| title_full | Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs |
| title_fullStr | Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs |
| title_full_unstemmed | Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs |
| title_short | Influence of terms of fabrication on electrical and photoelectric properties of photocell on base of Schottky barrier contact Pd-n-GaAs |
| title_sort | influence of terms of fabrication on electrical and photoelectric properties of photocell on base of schottky barrier contact pd n gaas |
| topic | method of fabricating the photocell n-type gallium arsenide schottky barrier contacts |
| url | https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/3%20(165)/78-83%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf |
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