Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics
This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation fre...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-01-01
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| Series: | International Journal of Antennas and Propagation |
| Online Access: | http://dx.doi.org/10.1155/2013/738659 |
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| _version_ | 1832564158241964032 |
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| author | Liwei Jin Zhiqun Cheng Qingna Wang |
| author_facet | Liwei Jin Zhiqun Cheng Qingna Wang |
| author_sort | Liwei Jin |
| collection | DOAJ |
| description | This paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics. |
| format | Article |
| id | doaj-art-e91fd2f039c04ef2a6beb7d833eb1544 |
| institution | Kabale University |
| issn | 1687-5869 1687-5877 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Antennas and Propagation |
| spelling | doaj-art-e91fd2f039c04ef2a6beb7d833eb15442025-02-03T01:11:40ZengWileyInternational Journal of Antennas and Propagation1687-58691687-58772013-01-01201310.1155/2013/738659738659Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its CharacteristicsLiwei Jin0Zhiqun Cheng1Qingna Wang2Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, ChinaKey Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, ChinaKey Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University, Hangzhou 310018, ChinaThis paper presents impact of layout sizes of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT heterostructure high-mobility transistors (HEMTs) on SiC substrate on its characteristics that include the threshold voltage, the maximum transconductance, characteristic frequency, and the maximum oscillation frequency. The changing parameters include the gate finger number, the gate width per finger. The measurement results based on common-source devices demonstrate that the above parameters have different effects on the threshold voltage, maximum transconductance, and frequency characteristics.http://dx.doi.org/10.1155/2013/738659 |
| spellingShingle | Liwei Jin Zhiqun Cheng Qingna Wang Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics International Journal of Antennas and Propagation |
| title | Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics |
| title_full | Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics |
| title_fullStr | Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics |
| title_full_unstemmed | Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics |
| title_short | Impact of the Gate Width of Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT on Its Characteristics |
| title_sort | impact of the gate width of al0 27ga0 73n aln al0 04ga0 96n gan hemt on its characteristics |
| url | http://dx.doi.org/10.1155/2013/738659 |
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