Silicon orientations to grow semi-polar AlN
Abstract The growth of non-polar GaN on Si substrates is a grand challenge in developing light-emitting diodes, where AlN layers serve as buffers to mitigate the lattice mismatch between GaN and Si in practice. Even though, the primary difficulty aries from the predominant growth of polar AlN(0001)...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-59613-5 |
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