990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect

High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance a...

Full description

Saved in:
Bibliographic Details
Main Authors: Yu-Xin Lei, Yong-Yi Chen, Feng Gao, De-Zheng Ma, Peng Jia, Qiu Cheng, Hao Wu, Chun-Kao Ruan, Lei Liang, Chao Chen, Jun Zhang, Jing-Yu Tian, Li Qin, Yong-Qiang Ning, Li-Jun Wang
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8618361/
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3&#x00A0;dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05&#x00B0;, the beam quality factor M<sup>2</sup> is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single-mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
ISSN:1943-0655