(In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD
The (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> photodetectors were fabricated on the single-crystalline (In<italic><sub>x</sub>...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8368328/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849417580799852544 |
|---|---|
| author | Ke Zhang Qian Feng Lu Huang Zhuangzhuang Hu Zhaoqing Feng Ang Li Hong Zhou Xiaoli Lu Chunfu Zhang Jincheng Zhang Yue Hao |
| author_facet | Ke Zhang Qian Feng Lu Huang Zhuangzhuang Hu Zhaoqing Feng Ang Li Hong Zhou Xiaoli Lu Chunfu Zhang Jincheng Zhang Yue Hao |
| author_sort | Ke Zhang |
| collection | DOAJ |
| description | The (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> photodetectors were fabricated on the single-crystalline (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic> <sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> films deposited on sapphire substrate by pulsed laser deposition. The structural and optical properties of the epilayers were investigated using high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and transmittance spectra. With decreasing the growth temperature, the indium composition increased and the bandgap decreased from 4.99 eV to 4.89 eV (In<sub>0.05 </sub>Ga<sub>0.95</sub>)<sub>2</sub>O<sub>3</sub> and 4.78 eV (In<sub>0.08</sub>Ga<sub>0.92</sub>)<sub>2</sub>O <sub>3</sub>. Furthermore, the photoelectrical characteristics of (In<italic><sub>x</sub></italic>Ga<sub>1−</sub> <italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> detectors were also studied. The enhanced <inline-formula> <tex-math notation="LaTeX">$I_{{\text{photo}}}$</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> $I_{{\text{dark}}}$</tex-math></inline-formula>, and responsivity <italic>R</italic> were achieved in the devices with higher In composition, while a larger number of defects were introduced, resulting in the significant persistent photoconductivity. |
| format | Article |
| id | doaj-art-e823db8dfebb47bcbb4f66dc50f05593 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-e823db8dfebb47bcbb4f66dc50f055932025-08-20T03:32:46ZengIEEEIEEE Photonics Journal1943-06552018-01-011031810.1109/JPHOT.2018.28419688368328(In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLDKe Zhang0https://orcid.org/0000-0003-4699-0292Qian Feng1https://orcid.org/0000-0001-7655-2600Lu Huang2Zhuangzhuang Hu3Zhaoqing Feng4Ang Li5Hong Zhou6https://orcid.org/0000-0002-0741-7568Xiaoli Lu7https://orcid.org/0000-0003-3689-5996Chunfu Zhang8https://orcid.org/0000-0001-9555-3377Jincheng Zhang9https://orcid.org/0000-0001-7332-6704Yue Hao10Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, ChinaThe (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> photodetectors were fabricated on the single-crystalline (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic> <sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> films deposited on sapphire substrate by pulsed laser deposition. The structural and optical properties of the epilayers were investigated using high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and transmittance spectra. With decreasing the growth temperature, the indium composition increased and the bandgap decreased from 4.99 eV to 4.89 eV (In<sub>0.05 </sub>Ga<sub>0.95</sub>)<sub>2</sub>O<sub>3</sub> and 4.78 eV (In<sub>0.08</sub>Ga<sub>0.92</sub>)<sub>2</sub>O <sub>3</sub>. Furthermore, the photoelectrical characteristics of (In<italic><sub>x</sub></italic>Ga<sub>1−</sub> <italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3</sub> detectors were also studied. The enhanced <inline-formula> <tex-math notation="LaTeX">$I_{{\text{photo}}}$</tex-math></inline-formula>, <inline-formula><tex-math notation="LaTeX"> $I_{{\text{dark}}}$</tex-math></inline-formula>, and responsivity <italic>R</italic> were achieved in the devices with higher In composition, while a larger number of defects were introduced, resulting in the significant persistent photoconductivity.https://ieeexplore.ieee.org/document/8368328/(InxGa1−x)2O3photodetectorstemperaturesPLD. |
| spellingShingle | Ke Zhang Qian Feng Lu Huang Zhuangzhuang Hu Zhaoqing Feng Ang Li Hong Zhou Xiaoli Lu Chunfu Zhang Jincheng Zhang Yue Hao (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD IEEE Photonics Journal (InxGa1−x)2O3 photodetectors temperatures PLD. |
| title | (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD |
| title_full | (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD |
| title_fullStr | (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD |
| title_full_unstemmed | (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD |
| title_short | (In<italic><sub>x</sub></italic>Ga<sub>1−</sub><italic><sub>x</sub></italic>)<sub>2</sub>O<sub>3 </sub> Photodetectors Fabricated on Sapphire at Different Temperatures by PLD |
| title_sort | in italic sub x sub italic ga sub 1 x2212 sub italic sub x sub italic sub 2 sub o sub 3 sub photodetectors fabricated on sapphire at different temperatures by pld |
| topic | (InxGa1−x)2O3 photodetectors temperatures PLD. |
| url | https://ieeexplore.ieee.org/document/8368328/ |
| work_keys_str_mv | AT kezhang initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT qianfeng initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT luhuang initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT zhuangzhuanghu initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT zhaoqingfeng initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT angli initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT hongzhou initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT xiaolilu initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT chunfuzhang initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT jinchengzhang initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld AT yuehao initalicsubxsubitalicgasub1x2212subitalicsubxsubitalicsub2subosub3subphotodetectorsfabricatedonsapphireatdifferenttemperaturesbypld |