Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture
Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11087563/ |
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| Summary: | Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene an attractive candidate for high-frequency and high-speed applications. However, the technology progress is limited by RF performance-killing agents like contact resistance, substrate parasitics, and material-to-device process flow limitations. This work provides a systematic insight into the performance limiters of graphene FETs on SiO2 and SiC substrates, grown via chemical vapor deposition (CVD) and epitaxial methods. Notably, the highest extracted cut-off frequency is 55/20 GHz on the SiC/SiO2 substrate, which reflects the superiority of SiC over SiO2 as a substrate for graphene RF devices. Additionally, the work discusses DC/RF performance degradation issues due to top gate dielectric deposition and demonstrate a unique “Inverted T-Gate” device architecture to mitigate the same. |
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| ISSN: | 2168-6734 |