The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics
The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect”) and of Ti, Zr and Ge dopings (so called the “electronic effect”) of IO and ITO ceramics. Indeed,...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1993-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/17302 |
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