Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride
Abstract The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in mon...
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Nature Portfolio
2025-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56065-9 |
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| author | Fanrong Lin Xiaoyu Xuan Zhonghan Cao Zhuhua Zhang Ying Liu Minmin Xue Yang Hang Xin Liu Yizhou Zhao Libo Gao Wanlin Guo Yanpeng Liu |
| author_facet | Fanrong Lin Xiaoyu Xuan Zhonghan Cao Zhuhua Zhang Ying Liu Minmin Xue Yang Hang Xin Liu Yizhou Zhao Libo Gao Wanlin Guo Yanpeng Liu |
| author_sort | Fanrong Lin |
| collection | DOAJ |
| description | Abstract The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (i.e., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm2 among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures. |
| format | Article |
| id | doaj-art-e730a19a09a04437b222e6a5dc63df4f |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-e730a19a09a04437b222e6a5dc63df4f2025-02-02T12:31:12ZengNature PortfolioNature Communications2041-17232025-01-011611810.1038/s41467-025-56065-9Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitrideFanrong Lin0Xiaoyu Xuan1Zhonghan Cao2Zhuhua Zhang3Ying Liu4Minmin Xue5Yang Hang6Xin Liu7Yizhou Zhao8Libo Gao9Wanlin Guo10Yanpeng Liu11Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsZhangjiang LaboratoryKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsSchool of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech)Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsNational Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing UniversityKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsKey Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and AstronauticsAbstract The ferroelectricity in stacked van der Waals multilayers through interlayer sliding holds great promise for ultrathin high-density memory devices, yet mostly subject to weak polarization and cryogenic operating condition. Here, we demonstrate robust room-temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride layers with a rhombohedral-like stacking (i.e., ABC-like stacking). The system exhibits an unconventional negative capacitance and record high electric polarization of 1.76 μC/cm2 among reported sliding ferroelectrics to date. The ferroelectricity also exists in similarly sandwiched bilayer and trilayer graphene, yet the polarization is slightly decreased with odd-even parity. Ab initio calculations suggest that the ferroelectricity is associated with a unique switchable co-sliding motion between graphene and adjacent boron nitride layer, in contrast to existing conventional vdW sliding ferroelectrics. As such, the ferroelectricity can sustain up to 325 K and remains intact after 50000 switching cycles in ~300000 s duration at 300 K. These results open a new opportunity to develop ultrathin memory devices based on rhombohedral-like heterostructures.https://doi.org/10.1038/s41467-025-56065-9 |
| spellingShingle | Fanrong Lin Xiaoyu Xuan Zhonghan Cao Zhuhua Zhang Ying Liu Minmin Xue Yang Hang Xin Liu Yizhou Zhao Libo Gao Wanlin Guo Yanpeng Liu Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride Nature Communications |
| title | Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| title_full | Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| title_fullStr | Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| title_full_unstemmed | Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| title_short | Room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| title_sort | room temperature ferroelectricity in monolayer graphene sandwiched between hexagonal boron nitride |
| url | https://doi.org/10.1038/s41467-025-56065-9 |
| work_keys_str_mv | AT fanronglin roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT xiaoyuxuan roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT zhonghancao roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT zhuhuazhang roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT yingliu roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT minminxue roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT yanghang roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT xinliu roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT yizhouzhao roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT libogao roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT wanlinguo roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride AT yanpengliu roomtemperatureferroelectricityinmonolayergraphenesandwichedbetweenhexagonalboronnitride |