Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis

Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis

In this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation process in a pure oxygen atmosphere to achieve a Z...

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Bibliographic Details
Main Authors: Fakhriddin T. Yusupov, Tokhirbek I. Rakhmonov, Dadakhon Sh. Khidirov, Shakhnoza Sh. Akhmadjanova, Javokhirbek A. Akhmadaliyev
Format: Article
Language:English
Published: V.N. Karazin Kharkiv National University Publishing 2025-06-01
Series:East European Journal of Physics
Subjects:
(zn,sn)o thin films
photovoltaic applications
thermal evaporation
x-ray diffraction
optical properties
electrical transport
hall effect
charge carrier mobility
heterostructures
Online Access:https://periodicals.karazin.ua/eejp/article/view/25168
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Summary:In this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation process in a pure oxygen atmosphere to achieve a ZnO-based oxide layer. Post-deposition annealing was conducted at various temperatures (400°C‑550°C) to enhance crystallinity and phase composition. X-ray diffraction (XRD) analysis confirmed the formation of a highly crystalline Zn2SnO4 phase, with the optimal structure obtained at 550°C. Optical characterization revealed a temperature-dependent bandgap narrowing effect, significantly influencing transmittance and reflectance spectra. Electrical properties were assessed via Hall effect and current-voltage (I-V) measurements, indicating an increase in carrier mobility and conductivity at higher annealing temperatures. The charge transport mechanism in Ni-(Zn,Sn)O-pSi-Ni heterostructures was analyzed using the space-charge-limited current (SCLC) model, revealing that carrier injection is the dominant transport process. The results demonstrate that (Zn,Sn)O thin films exhibit superior optoelectronic properties, making them promising candidates for photovoltaic and optoelectronic applications.
ISSN:2312-4334
2312-4539

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