Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics
One of the possible ways of improvement of the surface properties of silicon is the solid phase recrystallization of the surface silicon layer after the chemical-mechanical polishing with application of the rapid thermal treatment with the pulses of second duration. The purpose of the given paper is...
Saved in:
Main Authors: | V. A. Solodukha, U. A. Pilipenko, A. A. Omelchenko, D. V. Shestovski |
---|---|
Format: | Article |
Language: | English |
Published: |
Belarusian National Technical University
2022-10-01
|
Series: | Приборы и методы измерений |
Subjects: | |
Online Access: | https://pimi.bntu.by/jour/article/view/778 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment
by: U. A. Pilipenko, et al.
Published: (2024-07-01) -
A Whale Optimization Algorithm-Based Data Fitting Method to Determine the Parameters of Films Measured by Spectroscopic Ellipsometry
by: Liyuan Ma, et al.
Published: (2025-01-01) -
METHOD AND CONTROL SET-UP OF SILICON WAFER FLATNESS
by: V. A. Pilipenko, et al.
Published: (2015-04-01) -
EQUIPMENT FOR NONDESTRUCTIVE TESTING OF SILICON WAFERS SUBMICRON TOPOLOGY DURING THE FABRICATION OF INTEGRATED CIRCUITS
by: S. A. Chizhik, et al.
Published: (2015-03-01) -
Research of dispersion characteristics of optical glass
by: A.I. Yurin, et al.
Published: (2024-04-01)