Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32 nm. Use of the back gate leads to very interesting design opportunities....
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2017-10-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdf |
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