Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder
FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32 nm. Use of the back gate leads to very interesting design opportunities....
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| Format: | Article |
| Language: | English |
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Sumy State University
2017-10-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdf |
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| author | S. Rashid S. Khan A. Singh |
| author_facet | S. Rashid S. Khan A. Singh |
| author_sort | S. Rashid |
| collection | DOAJ |
| description | FinFET at 32 nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32 nm. Use of the back gate leads to very interesting design opportunities. Rich diversity of design styles, made possible by independent control of FinFET gates, can be used effectively to reduce total active power consumption IG/LP mode circuits provide an encouraging tradeoff between power and area. In the research work FinFET and MOSFET based adders are simulated as these devices are standout amongst the most generally actualized squares of microchip chips and advanced parts in the computerized incorporated circuit outline. |
| format | Article |
| id | doaj-art-e69bdbd262db4964b564a9a7ea3ba5b3 |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2017-10-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-e69bdbd262db4964b564a9a7ea3ba5b32025-08-20T02:21:03ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722017-10-019505003-105003-410.21272/jnep.9(5).05003Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look AdderS. Rashid0S. Khan1A. Singh23Dept. of Electronics and Communication, Dr. A. P. J. Abdul Kalam Technical University, LucknowME Department, Indian Institute of Technology Bombay, IndiaDept. of Electronics and Communication, Dr. A. P. J. Abdul Kalam Technical University, LucknowDept. of Electronics and Communication, Dr. A. P. J. Abdul Kalam Technical University, LucknowFinFET at 32В nm and beyond is an emerging transistor technology offer interesting delay–power tradeoff. FinFETs are a necessary step in the evolution of semiconductors because bulk CMOS has difficulties in scaling beyond 32В nm. Use of the back gate leads to very interesting design opportunities. Rich diversity of design styles, made possible by independent control of FinFET gates, can be used effectively to reduce total active power consumption IG/LP mode circuits provide an encouraging tradeoff between power and area. In the research work FinFET and MOSFET based adders are simulated as these devices are standout amongst the most generally actualized squares of microchip chips and advanced parts in the computerized incorporated circuit outline.http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdfFinFETMOSFETADDER32В nm TechnologyPowerSpee |
| spellingShingle | S. Rashid S. Khan A. Singh Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder Журнал нано- та електронної фізики FinFET MOSFET ADDER 32В nm Technology Power Spee |
| title | Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| title_full | Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| title_fullStr | Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| title_full_unstemmed | Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| title_short | Simulation and Performance Analysis of 32 nm FinFet based 4-Bit Carry Look Adder |
| title_sort | simulation and performance analysis of 32 nm finfet based 4 bit carry look adder |
| topic | FinFET MOSFET ADDER 32В nm Technology Power Spee |
| url | http://jnep.sumdu.edu.ua:8080/download/numbers/2017/5/articles/Proof_JNEP_05003.pdf |
| work_keys_str_mv | AT srashid simulationandperformanceanalysisof32nmfinfetbased4bitcarrylookadder AT skhan simulationandperformanceanalysisof32nmfinfetbased4bitcarrylookadder AT asingh simulationandperformanceanalysisof32nmfinfetbased4bitcarrylookadder |