Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical str...
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Elsevier
2025-01-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785424030424 |
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| author | Shengqian Zhang Yongsheng Ren Xingwei Yang Wenhui Ma Hui Chen Guoqiang Lv Yun Lei Yi Zeng Zhengxing Wang Bingxi Yu |
| author_facet | Shengqian Zhang Yongsheng Ren Xingwei Yang Wenhui Ma Hui Chen Guoqiang Lv Yun Lei Yi Zeng Zhengxing Wang Bingxi Yu |
| author_sort | Shengqian Zhang |
| collection | DOAJ |
| description | The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical structure, and properties of SiC crystals have also become research hotspots in industry and academia sectors. With the concept of carbon peak and carbon neutrality, the photovoltaic industry has witnessed rapid development. In the process of silicon wafer production, nearly half of the crystalline silicon is lost in the form of silicon powder into silicon cutting waste (SCW), which results in a great waste of resources and severe environmental pollution, and therefore the use of SCW for the preparation of SiC materials has received great attention in recent years. This paper highlights the principles and methods of SiC growth, crystal structure and properties, and discusses the application of SiC prepared from SCW. |
| format | Article |
| id | doaj-art-e642f0b5732d4dabb0880bd387fc4061 |
| institution | Kabale University |
| issn | 2238-7854 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj-art-e642f0b5732d4dabb0880bd387fc40612025-01-19T06:25:55ZengElsevierJournal of Materials Research and Technology2238-78542025-01-013425932608Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting wasteShengqian Zhang0Yongsheng Ren1Xingwei Yang2Wenhui Ma3Hui Chen4Guoqiang Lv5Yun Lei6Yi Zeng7Zhengxing Wang8Bingxi Yu9Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan; Corresponding author. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Corresponding author. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.School of Engineering, Yunnan University, Kunming, 650500, China; Corresponding author. School of Engineering, Yunnan University, Kunming, 650500, China.Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan; Institute for Nonferrous Metal Research, Zhejiang Huayou Cobalt Co, Quzhou, 324012, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaThe third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical structure, and properties of SiC crystals have also become research hotspots in industry and academia sectors. With the concept of carbon peak and carbon neutrality, the photovoltaic industry has witnessed rapid development. In the process of silicon wafer production, nearly half of the crystalline silicon is lost in the form of silicon powder into silicon cutting waste (SCW), which results in a great waste of resources and severe environmental pollution, and therefore the use of SCW for the preparation of SiC materials has received great attention in recent years. This paper highlights the principles and methods of SiC growth, crystal structure and properties, and discusses the application of SiC prepared from SCW.http://www.sciencedirect.com/science/article/pii/S2238785424030424Silicon carbideGrowth principles and methodsCrystal structurePropertiesSilicon cutting waste |
| spellingShingle | Shengqian Zhang Yongsheng Ren Xingwei Yang Wenhui Ma Hui Chen Guoqiang Lv Yun Lei Yi Zeng Zhengxing Wang Bingxi Yu Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste Journal of Materials Research and Technology Silicon carbide Growth principles and methods Crystal structure Properties Silicon cutting waste |
| title | Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste |
| title_full | Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste |
| title_fullStr | Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste |
| title_full_unstemmed | Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste |
| title_short | Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste |
| title_sort | crystal growth principles methods properties of silicon carbide and its new process prepared from silicon cutting waste |
| topic | Silicon carbide Growth principles and methods Crystal structure Properties Silicon cutting waste |
| url | http://www.sciencedirect.com/science/article/pii/S2238785424030424 |
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