Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications
This study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, with consistent set and reset voltages. Increasing Ag NP concentration enhances co...
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| Format: | Article |
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MDPI AG
2025-03-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/7/517 |
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| author | Jongyun Choi Seung Hun Lee Taehun Kim Kyungtaek Min Sung-Nam Lee |
| author_facet | Jongyun Choi Seung Hun Lee Taehun Kim Kyungtaek Min Sung-Nam Lee |
| author_sort | Jongyun Choi |
| collection | DOAJ |
| description | This study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, with consistent set and reset voltages. Increasing Ag NP concentration enhances conductive filament formation, leading to sharper switching transitions and a higher HRS/LRS ratio, w-hich increases from 43 (0 wt% Ag NP) to 4.6 × 10<sup>4</sup> (10 wt% Ag NP). Log(I)-log(V) analysis reveals a conduction transition from Ohmic to Poole–Frenkel mechanisms, indicating improved charge percolation. Reliability tests show stable LRS values, while HRS exhibits greater variation at higher Ag NP concentrations. These results demonstrate that Ag NPs play a crucial role in optimizing memristor performance, improving switching characteristics, and enhancing reliability. The findings suggest that Ag/SF-Ag NP/Si memristors are promising for high-performance resistive memory and neuromorphic computing applications. |
| format | Article |
| id | doaj-art-e619414fd8ee496798d8cb36fce9ff4e |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-e619414fd8ee496798d8cb36fce9ff4e2025-08-20T03:08:57ZengMDPI AGNanomaterials2079-49912025-03-0115751710.3390/nano15070517Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic ApplicationsJongyun Choi0Seung Hun Lee1Taehun Kim2Kyungtaek Min3Sung-Nam Lee4Department of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of KoreaDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of KoreaDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of KoreaDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of KoreaDepartment of IT Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of KoreaThis study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, with consistent set and reset voltages. Increasing Ag NP concentration enhances conductive filament formation, leading to sharper switching transitions and a higher HRS/LRS ratio, w-hich increases from 43 (0 wt% Ag NP) to 4.6 × 10<sup>4</sup> (10 wt% Ag NP). Log(I)-log(V) analysis reveals a conduction transition from Ohmic to Poole–Frenkel mechanisms, indicating improved charge percolation. Reliability tests show stable LRS values, while HRS exhibits greater variation at higher Ag NP concentrations. These results demonstrate that Ag NPs play a crucial role in optimizing memristor performance, improving switching characteristics, and enhancing reliability. The findings suggest that Ag/SF-Ag NP/Si memristors are promising for high-performance resistive memory and neuromorphic computing applications.https://www.mdpi.com/2079-4991/15/7/517silk fibroinAg nanoparticlememristorresistive switching |
| spellingShingle | Jongyun Choi Seung Hun Lee Taehun Kim Kyungtaek Min Sung-Nam Lee Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications Nanomaterials silk fibroin Ag nanoparticle memristor resistive switching |
| title | Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications |
| title_full | Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications |
| title_fullStr | Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications |
| title_full_unstemmed | Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications |
| title_short | Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications |
| title_sort | enhanced resistive switching and conduction mechanisms in silk fibroin based memristors with ag nanoparticles for bio neuromorphic applications |
| topic | silk fibroin Ag nanoparticle memristor resistive switching |
| url | https://www.mdpi.com/2079-4991/15/7/517 |
| work_keys_str_mv | AT jongyunchoi enhancedresistiveswitchingandconductionmechanismsinsilkfibroinbasedmemristorswithagnanoparticlesforbioneuromorphicapplications AT seunghunlee enhancedresistiveswitchingandconductionmechanismsinsilkfibroinbasedmemristorswithagnanoparticlesforbioneuromorphicapplications AT taehunkim enhancedresistiveswitchingandconductionmechanismsinsilkfibroinbasedmemristorswithagnanoparticlesforbioneuromorphicapplications AT kyungtaekmin enhancedresistiveswitchingandconductionmechanismsinsilkfibroinbasedmemristorswithagnanoparticlesforbioneuromorphicapplications AT sungnamlee enhancedresistiveswitchingandconductionmechanismsinsilkfibroinbasedmemristorswithagnanoparticlesforbioneuromorphicapplications |