N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy
N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency...
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| Main Author: | |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/48934 |
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| Summary: | N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of
potential barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a
high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is
operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively.
A lasing threshold current density, front slope efficiency, and external differential
quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%,
respectively. The peak emission wavelength is centered at about 980nm. |
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| ISSN: | 0882-7516 1563-5031 |