Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
High-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessita...
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Tsinghua University Press
2025-01-01
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Series: | Journal of Advanced Ceramics |
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Online Access: | https://www.sciopen.com/article/10.26599/JAC.2024.9221013 |
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author | Yu-Bin Shin Su Been Ham Ha-Neul Kim Mi-Ju Kim Jae-Woong Ko Jae-Wook Lee Young-Jo Park Jung-Hyung Kim Hyo-Chang Lee Young Hwa Jung Jung Woo Lee Ho Jin Ma |
author_facet | Yu-Bin Shin Su Been Ham Ha-Neul Kim Mi-Ju Kim Jae-Woong Ko Jae-Wook Lee Young-Jo Park Jung-Hyung Kim Hyo-Chang Lee Young Hwa Jung Jung Woo Lee Ho Jin Ma |
author_sort | Yu-Bin Shin |
collection | DOAJ |
description | High-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths. Therefore, novel materials with high plasma etching resistance and minimal contaminant generation are needed. The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge. In this study, we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency, dense microstructure, and minimal residual pores. A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity. An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials. These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications, such as next-generation active optical ceramics. |
format | Article |
id | doaj-art-e5adfa45d2e24a97961737ab1dbcb0e1 |
institution | Kabale University |
issn | 2226-4108 2227-8508 |
language | English |
publishDate | 2025-01-01 |
publisher | Tsinghua University Press |
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series | Journal of Advanced Ceramics |
spelling | doaj-art-e5adfa45d2e24a97961737ab1dbcb0e12025-01-24T07:52:15ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-01-01141922101310.26599/JAC.2024.9221013Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistanceYu-Bin Shin0Su Been Ham1Ha-Neul Kim2Mi-Ju Kim3Jae-Woong Ko4Jae-Wook Lee5Young-Jo Park6Jung-Hyung Kim7Hyo-Chang Lee8Young Hwa Jung9Jung Woo Lee10Ho Jin Ma11Nano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaSemiconductor Integrated Metrology Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of KoreaDepartment of semiconductor Science, Engineering and Technology, Korea Aerospace University, Goyang 10540, Republic of KoreaPLS-II Beamline Division, Pohang Accelerator Laboratory, Pohang 37673, Republic of KoreaDepartment of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaHigh-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths. Therefore, novel materials with high plasma etching resistance and minimal contaminant generation are needed. The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge. In this study, we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency, dense microstructure, and minimal residual pores. A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity. An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials. These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications, such as next-generation active optical ceramics.https://www.sciopen.com/article/10.26599/JAC.2024.9221013high-entropy ceramicsplasma etching resistancetransparent ceramicssinteringsemiconductor manufacturing |
spellingShingle | Yu-Bin Shin Su Been Ham Ha-Neul Kim Mi-Ju Kim Jae-Woong Ko Jae-Wook Lee Young-Jo Park Jung-Hyung Kim Hyo-Chang Lee Young Hwa Jung Jung Woo Lee Ho Jin Ma Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance Journal of Advanced Ceramics high-entropy ceramics plasma etching resistance transparent ceramics sintering semiconductor manufacturing |
title | Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
title_full | Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
title_fullStr | Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
title_full_unstemmed | Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
title_short | Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
title_sort | novel transparent high entropy sesquioxide ceramics with high physicochemical plasma etching resistance |
topic | high-entropy ceramics plasma etching resistance transparent ceramics sintering semiconductor manufacturing |
url | https://www.sciopen.com/article/10.26599/JAC.2024.9221013 |
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