Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance

High-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessita...

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Main Authors: Yu-Bin Shin, Su Been Ham, Ha-Neul Kim, Mi-Ju Kim, Jae-Woong Ko, Jae-Wook Lee, Young-Jo Park, Jung-Hyung Kim, Hyo-Chang Lee, Young Hwa Jung, Jung Woo Lee, Ho Jin Ma
Format: Article
Language:English
Published: Tsinghua University Press 2025-01-01
Series:Journal of Advanced Ceramics
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Online Access:https://www.sciopen.com/article/10.26599/JAC.2024.9221013
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author Yu-Bin Shin
Su Been Ham
Ha-Neul Kim
Mi-Ju Kim
Jae-Woong Ko
Jae-Wook Lee
Young-Jo Park
Jung-Hyung Kim
Hyo-Chang Lee
Young Hwa Jung
Jung Woo Lee
Ho Jin Ma
author_facet Yu-Bin Shin
Su Been Ham
Ha-Neul Kim
Mi-Ju Kim
Jae-Woong Ko
Jae-Wook Lee
Young-Jo Park
Jung-Hyung Kim
Hyo-Chang Lee
Young Hwa Jung
Jung Woo Lee
Ho Jin Ma
author_sort Yu-Bin Shin
collection DOAJ
description High-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths. Therefore, novel materials with high plasma etching resistance and minimal contaminant generation are needed. The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge. In this study, we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency, dense microstructure, and minimal residual pores. A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity. An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials. These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications, such as next-generation active optical ceramics.
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institution Kabale University
issn 2226-4108
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publishDate 2025-01-01
publisher Tsinghua University Press
record_format Article
series Journal of Advanced Ceramics
spelling doaj-art-e5adfa45d2e24a97961737ab1dbcb0e12025-01-24T07:52:15ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-01-01141922101310.26599/JAC.2024.9221013Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistanceYu-Bin Shin0Su Been Ham1Ha-Neul Kim2Mi-Ju Kim3Jae-Woong Ko4Jae-Wook Lee5Young-Jo Park6Jung-Hyung Kim7Hyo-Chang Lee8Young Hwa Jung9Jung Woo Lee10Ho Jin Ma11Nano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaSemiconductor Integrated Metrology Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of KoreaDepartment of semiconductor Science, Engineering and Technology, Korea Aerospace University, Goyang 10540, Republic of KoreaPLS-II Beamline Division, Pohang Accelerator Laboratory, Pohang 37673, Republic of KoreaDepartment of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of KoreaNano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of KoreaHigh-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths. Therefore, novel materials with high plasma etching resistance and minimal contaminant generation are needed. The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge. In this study, we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency, dense microstructure, and minimal residual pores. A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity. An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials. These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications, such as next-generation active optical ceramics.https://www.sciopen.com/article/10.26599/JAC.2024.9221013high-entropy ceramicsplasma etching resistancetransparent ceramicssinteringsemiconductor manufacturing
spellingShingle Yu-Bin Shin
Su Been Ham
Ha-Neul Kim
Mi-Ju Kim
Jae-Woong Ko
Jae-Wook Lee
Young-Jo Park
Jung-Hyung Kim
Hyo-Chang Lee
Young Hwa Jung
Jung Woo Lee
Ho Jin Ma
Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
Journal of Advanced Ceramics
high-entropy ceramics
plasma etching resistance
transparent ceramics
sintering
semiconductor manufacturing
title Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
title_full Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
title_fullStr Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
title_full_unstemmed Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
title_short Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance
title_sort novel transparent high entropy sesquioxide ceramics with high physicochemical plasma etching resistance
topic high-entropy ceramics
plasma etching resistance
transparent ceramics
sintering
semiconductor manufacturing
url https://www.sciopen.com/article/10.26599/JAC.2024.9221013
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