Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs
In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the speci...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10758816/ |
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