Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation

The influence of secondary phases of ZnS and Cu2SnS3 (CTS) in Cu2ZnSnS4 (CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure calculation. The ZnS/CZTS heterointerface is...

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Main Authors: Wujisiguleng Bao, Masaya Ichimura
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2015/592079
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author Wujisiguleng Bao
Masaya Ichimura
author_facet Wujisiguleng Bao
Masaya Ichimura
author_sort Wujisiguleng Bao
collection DOAJ
description The influence of secondary phases of ZnS and Cu2SnS3 (CTS) in Cu2ZnSnS4 (CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure calculation. The ZnS/CZTS heterointerface is of type I and since ZnS has a larger band gap than that of CZTS, the ZnS phase in CZTS is predicted to be resistive barriers for carriers. The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. Therefore, the CTS phase will act as a recombination site in CZTS.
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record_format Article
series International Journal of Photoenergy
spelling doaj-art-e53cc5b4adc94d169db99e6654f66a482025-02-03T05:50:33ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/592079592079Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles CalculationWujisiguleng Bao0Masaya Ichimura1Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, JapanDepartment of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, JapanThe influence of secondary phases of ZnS and Cu2SnS3 (CTS) in Cu2ZnSnS4 (CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure calculation. The ZnS/CZTS heterointerface is of type I and since ZnS has a larger band gap than that of CZTS, the ZnS phase in CZTS is predicted to be resistive barriers for carriers. The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. Therefore, the CTS phase will act as a recombination site in CZTS.http://dx.doi.org/10.1155/2015/592079
spellingShingle Wujisiguleng Bao
Masaya Ichimura
Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
International Journal of Photoenergy
title Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
title_full Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
title_fullStr Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
title_full_unstemmed Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
title_short Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First Principles Calculation
title_sort influence of secondary phases in kesterite cu2znsns4 absorber material based on the first principles calculation
url http://dx.doi.org/10.1155/2015/592079
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AT masayaichimura influenceofsecondaryphasesinkesteritecu2znsns4absorbermaterialbasedonthefirstprinciplescalculation