Diverse Role of Silicon Carbide in the Domain of Nanomaterials

Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical dev...

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Main Authors: T. Sahu, B. Ghosh, S. K. Pradhan, T. Ganguly
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:International Journal of Electrochemistry
Online Access:http://dx.doi.org/10.1155/2012/271285
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author T. Sahu
B. Ghosh
S. K. Pradhan
T. Ganguly
author_facet T. Sahu
B. Ghosh
S. K. Pradhan
T. Ganguly
author_sort T. Sahu
collection DOAJ
description Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.
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id doaj-art-e518a1b90aac4c97bad4457c349e2214
institution Kabale University
issn 2090-3529
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language English
publishDate 2012-01-01
publisher Wiley
record_format Article
series International Journal of Electrochemistry
spelling doaj-art-e518a1b90aac4c97bad4457c349e22142025-02-03T01:01:38ZengWileyInternational Journal of Electrochemistry2090-35292090-35372012-01-01201210.1155/2012/271285271285Diverse Role of Silicon Carbide in the Domain of NanomaterialsT. Sahu0B. Ghosh1S. K. Pradhan2T. Ganguly3Department of Physics, Ramananda College, Bishnupur, West Bengal, Bankura 713104, IndiaDepartment of Physics, Ramananda College, Bishnupur, West Bengal, Bankura 713104, IndiaDepartment of Physics, The University of Burdwan, Golapbag, West Bengal, Burdwan 722122, IndiaDepartment of Spectroscopy, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, IndiaSilicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.http://dx.doi.org/10.1155/2012/271285
spellingShingle T. Sahu
B. Ghosh
S. K. Pradhan
T. Ganguly
Diverse Role of Silicon Carbide in the Domain of Nanomaterials
International Journal of Electrochemistry
title Diverse Role of Silicon Carbide in the Domain of Nanomaterials
title_full Diverse Role of Silicon Carbide in the Domain of Nanomaterials
title_fullStr Diverse Role of Silicon Carbide in the Domain of Nanomaterials
title_full_unstemmed Diverse Role of Silicon Carbide in the Domain of Nanomaterials
title_short Diverse Role of Silicon Carbide in the Domain of Nanomaterials
title_sort diverse role of silicon carbide in the domain of nanomaterials
url http://dx.doi.org/10.1155/2012/271285
work_keys_str_mv AT tsahu diverseroleofsiliconcarbideinthedomainofnanomaterials
AT bghosh diverseroleofsiliconcarbideinthedomainofnanomaterials
AT skpradhan diverseroleofsiliconcarbideinthedomainofnanomaterials
AT tganguly diverseroleofsiliconcarbideinthedomainofnanomaterials