High-Performance Carbon Nanotube Electronic Devices: Progress and Challenges
As silicon-based complementary metal-oxide-semiconductor (CMOS) technology approaches its physical and scaling limits at sub-3-nanometer nodes, critical challenges including the short-channel effect (SCE), surging power consumption, and aggravated parasitic effects have severely constrained further...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/16/5/554 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!