Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices
In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier l...
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/2012/359580 |
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| author | J. H. Yum J. Oh Todd. W. Hudnall C. W. Bielawski G. Bersuker S. K. Banerjee |
| author_facet | J. H. Yum J. Oh Todd. W. Hudnall C. W. Bielawski G. Bersuker S. K. Banerjee |
| author_sort | J. H. Yum |
| collection | DOAJ |
| description | In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge. |
| format | Article |
| id | doaj-art-e4cacb66b3d347798b435cad294ead1e |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-e4cacb66b3d347798b435cad294ead1e2025-02-03T01:23:32ZengWileyActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/359580359580Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor DevicesJ. H. Yum0J. Oh1Todd. W. Hudnall2C. W. Bielawski3G. Bersuker4S. K. Banerjee5Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USASchool of Integrated Technology, College of Engineering, Yonsei University, 162-1 Songdo-dong, Incheon 406-840, Republic of KoreaDepartment of Chemistry and Biochemistry, Texas State University, 601 University Drive, San Marcos, TX 78666, USADepartment of Chemistry, UT, Austin, TX 78712, USASEMATECH, 2706 Montopolis Drive, Austin, TX 78741, USAMicroelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78758, USAIn a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2 gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2 gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.http://dx.doi.org/10.1155/2012/359580 |
| spellingShingle | J. H. Yum J. Oh Todd. W. Hudnall C. W. Bielawski G. Bersuker S. K. Banerjee Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices Active and Passive Electronic Components |
| title | Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices |
| title_full | Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices |
| title_fullStr | Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices |
| title_full_unstemmed | Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices |
| title_short | Comparative Study of SiO2, Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices |
| title_sort | comparative study of sio2 al2o3 and beo ultrathin interfacial barrier layers in si metal oxide semiconductor devices |
| url | http://dx.doi.org/10.1155/2012/359580 |
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