Balanced truncation model reduction for laser heating wafer model in frequency restricted domain
Modeling and simulating laser heating phenomena are crucial for optimizing manufacturing processes and ensuring high-quality final products. A major challenge in semiconductor manufacturing is achieving accurate, real-time temperature control during wafer heating. To reduce the computational burden...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Franklin Open |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277318632400121X |
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| Summary: | Modeling and simulating laser heating phenomena are crucial for optimizing manufacturing processes and ensuring high-quality final products. A major challenge in semiconductor manufacturing is achieving accurate, real-time temperature control during wafer heating. To reduce the computational burden of complex mathematical models, low-dimensional reduced models can be employed. In this paper, we develop a mathematical model for laser heating in silicon wafers. For model reduction, we use the balanced truncation method, considering both frequency-unrestricted and restricted cases. Additionally, the rational Krylov subspace method is applied to solve high-dimensional sparse matrix equations. To gain key physical insights, we use the COMSOL Multiphysics package. Finally, some numerical experiments are conducted using MATLAB to validate the proposed approach. |
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| ISSN: | 2773-1863 |