APA (7th ed.) Citation

Liu, Q., Zhou, J., Zhou, X., Wong, M. H., Yao, H., Liu, J., . . . Long, S. Improved blocking capability of N-ion-implanted β-Ga2O3 U-shaped trench gate MOSFET by annealing in oxygen. IOP Publishing.

Chicago Style (17th ed.) Citation

Liu, Qi, Jingbo Zhou, Xuanze Zhou, Man Hoi Wong, Huidong Yao, Jinyang Liu, Xiaodong Zhang, Guangwei Xu, and Shibing Long. Improved Blocking Capability of N-ion-implanted β-Ga2O3 U-shaped Trench Gate MOSFET by Annealing in Oxygen. IOP Publishing.

MLA (9th ed.) Citation

Liu, Qi, et al. Improved Blocking Capability of N-ion-implanted β-Ga2O3 U-shaped Trench Gate MOSFET by Annealing in Oxygen. IOP Publishing.