Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors
Planar Hall magnetoresistance (PHMR) sensors are widely utilized due to their high sensitivity, simple structure, and cost-effectiveness. However, their performance is influenced by both the driving mode and the thickness of the ferromagnetic layer, yet the combined effects of these factors remain i...
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MDPI AG
2025-02-01
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| author | Changyeop Jeon Mijin Kim Jinwoo Kim Sunghee Yang Eunseo Choi Byeonghwa Lim |
| author_facet | Changyeop Jeon Mijin Kim Jinwoo Kim Sunghee Yang Eunseo Choi Byeonghwa Lim |
| author_sort | Changyeop Jeon |
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| description | Planar Hall magnetoresistance (PHMR) sensors are widely utilized due to their high sensitivity, simple structure, and cost-effectiveness. However, their performance is influenced by both the driving mode and the thickness of the ferromagnetic layer, yet the combined effects of these factors remain insufficiently explored. This study systematically investigates the impact of Ni<sub>80</sub>Fe<sub>20</sub> thickness (5–35 nm) on PHMR sensor performance under constant current (CC) and constant voltage (CV) modes, with a focus on optimizing the peak-to-peak voltage (V<sub>p-p</sub>). In CC mode, electron surface scattering at 5–10 nm increases resistance, leading to a sharp rise in V<sub>p-p</sub>, followed by a decline as the thickness increases. In contrast, CV mode minimizes resistance-related effects, with sensor signals predominantly governed by magnetization-dependent resistivity. Experimentally, the optimal V<sub>p-p</sub> was observed at 25 nm in CV mode. However, for thicknesses beyond this point, the reduction in sensor resistance suggests that voltage distribution across both the sensor and external load resistance significantly influences performance. These findings provide practical insights into optimizing PHMR sensors by elucidating the interplay between driving modes and material properties. The results contribute to the advancement of high-performance PHMR sensors with enhanced signal stability and sensitivity for industrial and scientific applications. |
| format | Article |
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| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
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| spelling | doaj-art-e3a06262e68b4b35a876b97c5e63f1402025-08-20T02:03:32ZengMDPI AGSensors1424-82202025-02-01254123510.3390/s25041235Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance SensorsChangyeop Jeon0Mijin Kim1Jinwoo Kim2Sunghee Yang3Eunseo Choi4Byeonghwa Lim5Department of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of KoreaDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of KoreaDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of KoreaDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of KoreaDepartment of Physics and Chemistry, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of KoreaDepartment of Smart Sensor Engineering, Andong National University, Andong-si 36729, Republic of KoreaPlanar Hall magnetoresistance (PHMR) sensors are widely utilized due to their high sensitivity, simple structure, and cost-effectiveness. However, their performance is influenced by both the driving mode and the thickness of the ferromagnetic layer, yet the combined effects of these factors remain insufficiently explored. This study systematically investigates the impact of Ni<sub>80</sub>Fe<sub>20</sub> thickness (5–35 nm) on PHMR sensor performance under constant current (CC) and constant voltage (CV) modes, with a focus on optimizing the peak-to-peak voltage (V<sub>p-p</sub>). In CC mode, electron surface scattering at 5–10 nm increases resistance, leading to a sharp rise in V<sub>p-p</sub>, followed by a decline as the thickness increases. In contrast, CV mode minimizes resistance-related effects, with sensor signals predominantly governed by magnetization-dependent resistivity. Experimentally, the optimal V<sub>p-p</sub> was observed at 25 nm in CV mode. However, for thicknesses beyond this point, the reduction in sensor resistance suggests that voltage distribution across both the sensor and external load resistance significantly influences performance. These findings provide practical insights into optimizing PHMR sensors by elucidating the interplay between driving modes and material properties. The results contribute to the advancement of high-performance PHMR sensors with enhanced signal stability and sensitivity for industrial and scientific applications.https://www.mdpi.com/1424-8220/25/4/1235magnetoresistive sensorsdriving modeconstant current modeconstant voltage mode |
| spellingShingle | Changyeop Jeon Mijin Kim Jinwoo Kim Sunghee Yang Eunseo Choi Byeonghwa Lim Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors Sensors magnetoresistive sensors driving mode constant current mode constant voltage mode |
| title | Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors |
| title_full | Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors |
| title_fullStr | Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors |
| title_full_unstemmed | Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors |
| title_short | Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors |
| title_sort | systematic analysis of driving modes and nife layer thickness in planar hall magnetoresistance sensors |
| topic | magnetoresistive sensors driving mode constant current mode constant voltage mode |
| url | https://www.mdpi.com/1424-8220/25/4/1235 |
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