Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering
Cu2SnS3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3 thin films were successfully obtained by sulfurizing CuSnS2 thin films deposited by RF magnetron sputtering at temper...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2013/726080 |
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| author | Pengyi Zhao Shuying Cheng |
| author_facet | Pengyi Zhao Shuying Cheng |
| author_sort | Pengyi Zhao |
| collection | DOAJ |
| description | Cu2SnS3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3 thin films were successfully obtained by sulfurizing CuSnS2 thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu2SnS3 thin films was investigated. The experimental results show that the Cu2SnS3 thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu2SnS3 films are 9 cm2/V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV. |
| format | Article |
| id | doaj-art-e396189a8eab4fb2bdcdae4004adb2f4 |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-e396189a8eab4fb2bdcdae4004adb2f42025-02-03T01:33:12ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422013-01-01201310.1155/2013/726080726080Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron SputteringPengyi Zhao0Shuying Cheng1Institute of Micro/Nano Devices and Solar Cells, School of Physics & Information Engineering, Fuzhou University, Fuzhou 350108, ChinaInstitute of Micro/Nano Devices and Solar Cells, School of Physics & Information Engineering, Fuzhou University, Fuzhou 350108, ChinaCu2SnS3 is a narrow-band-gap semiconductor material. It has suitable optical and electrical properties which make it a potential absorber layer of solar cells. In this paper, Cu2SnS3 thin films were successfully obtained by sulfurizing CuSnS2 thin films deposited by RF magnetron sputtering at temperatures of 350–425°C for 2 h in an atmosphere of hydrogen sulfide and nitrogen. The influence of the sulfurization temperature on the electrical and optical properties of the Cu2SnS3 thin films was investigated. The experimental results show that the Cu2SnS3 thin films sulfurized at a temperature of 425°C exhibit better properties than others. The mobility and resistivity of the Cu2SnS3 films are 9 cm2/V·s and 3 Ω·cm, respectively. And its optical band gap is estimated to be about 1.77 eV.http://dx.doi.org/10.1155/2013/726080 |
| spellingShingle | Pengyi Zhao Shuying Cheng Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering Advances in Materials Science and Engineering |
| title | Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering |
| title_full | Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering |
| title_fullStr | Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering |
| title_full_unstemmed | Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering |
| title_short | Influence of Sulfurization Temperature on Photoelectric Properties Cu2SnS3 Thin Films Deposited by Magnetron Sputtering |
| title_sort | influence of sulfurization temperature on photoelectric properties cu2sns3 thin films deposited by magnetron sputtering |
| url | http://dx.doi.org/10.1155/2013/726080 |
| work_keys_str_mv | AT pengyizhao influenceofsulfurizationtemperatureonphotoelectricpropertiescu2sns3thinfilmsdepositedbymagnetronsputtering AT shuyingcheng influenceofsulfurizationtemperatureonphotoelectricpropertiescu2sns3thinfilmsdepositedbymagnetronsputtering |