2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect

2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect

We present a contactless determination of the two-dimensional electron gas (2DEG) properties in AlScN/GaN and AlYN/GaN high electron mobility transistor (HEMT) structures using the terahertz optical Hall effect (OHE) over a temperature range of 20 K–360 K. The structures are grown on sapphire or 4H-...

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Bibliographic Details
Main Authors:	V. Stanishev, I. Streicher, A. Papamichail, V. Rindert, P. P. Paskov, S. Leone, V. Darakchieva
Format:	Article
Language:	English
Published:	Frontiers Media S.A. 2025-07-01
Series:	Frontiers in Electronic Materials
Subjects:	HEMT 2DEG ellipsometry AlScN AlYN effective mass
Online Access:	https://www.frontiersin.org/articles/10.3389/femat.2025.1622176/full
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