Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode
Abstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. In this study, the fabrication of a high‐pe...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400588 |
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| author | Haris Naeem Abbasi Moheb Sheikhi Donghyeok Kim Ranveer Singh Jiarui Gong Jie Zhou Qiming Zhang Shuoyang Qiu Carolina Adamo Patrick Marshall Clincy Cheung Vincent Gambin Zhenqiang Ma |
| author_facet | Haris Naeem Abbasi Moheb Sheikhi Donghyeok Kim Ranveer Singh Jiarui Gong Jie Zhou Qiming Zhang Shuoyang Qiu Carolina Adamo Patrick Marshall Clincy Cheung Vincent Gambin Zhenqiang Ma |
| author_sort | Haris Naeem Abbasi |
| collection | DOAJ |
| description | Abstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. In this study, the fabrication of a high‐performing emitter and base (E‐B) diode using transferable NMs of n‐AlGaAs/p‐GaAsP is demonstrated. Using a modified epitaxial lift‐off and transfer method, a single‐crystalline n‐AlGaAs/p‐GaAsP fragile NMs transfer onto ultrathin oxide (UO) grown GaN and Si substrates. The crystalline quality of the NMs is characterized by X‐ray diffraction and Raman spectroscopy techniques before and after transfer, no noticeable degradation has been found in its crystalline quality. In addition, atomic force microscopy and scanning electron microscopy images confirm the smooth surface and uniformity of the NMs over the whole substrate without any formation of cracks, respectively. Kelvin probe force microscopy demonstrates the formation of a nanoscale contact potential barrier at the interface of the E‐B diode. Furthermore, current–voltage (I–V) measurements demonstrate that the performance of the NM‐based E‐B diode is comparable to that of a rigid diode on the as‐grown sample. The findings highlight the potential of the epitaxial lift‐off and transfer method for the heterogeneous integration of III–V semiconductor materials to overcome the lattice‐mismatch limitations. |
| format | Article |
| id | doaj-art-e2f5b92d4663478a86e5e70bb0ccc9ea |
| institution | Kabale University |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj-art-e2f5b92d4663478a86e5e70bb0ccc9ea2025-02-03T13:24:06ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-02-01123n/an/a10.1002/admi.202400588Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance DiodeHaris Naeem Abbasi0Moheb Sheikhi1Donghyeok Kim2Ranveer Singh3Jiarui Gong4Jie Zhou5Qiming Zhang6Shuoyang Qiu7Carolina Adamo8Patrick Marshall9Clincy Cheung10Vincent Gambin11Zhenqiang Ma12Department of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USANorthrop Grumman Corporation Redondo Beach CA 90278 USANorthrop Grumman Corporation Redondo Beach CA 90278 USANorthrop Grumman Corporation Redondo Beach CA 90278 USANorthrop Grumman Corporation Redondo Beach CA 90278 USADepartment of Electrical and Computer Engineering University of Wisconsin‐Madison Madison WI 53706 USAAbstract Nanomembranes (NMs) made from single‐crystalline inorganic semiconductors offer unique properties, such as flexibility, transparency, and tunable bandgaps, making them suitable for complex device integration and next‐generation high‐power devices. In this study, the fabrication of a high‐performing emitter and base (E‐B) diode using transferable NMs of n‐AlGaAs/p‐GaAsP is demonstrated. Using a modified epitaxial lift‐off and transfer method, a single‐crystalline n‐AlGaAs/p‐GaAsP fragile NMs transfer onto ultrathin oxide (UO) grown GaN and Si substrates. The crystalline quality of the NMs is characterized by X‐ray diffraction and Raman spectroscopy techniques before and after transfer, no noticeable degradation has been found in its crystalline quality. In addition, atomic force microscopy and scanning electron microscopy images confirm the smooth surface and uniformity of the NMs over the whole substrate without any formation of cracks, respectively. Kelvin probe force microscopy demonstrates the formation of a nanoscale contact potential barrier at the interface of the E‐B diode. Furthermore, current–voltage (I–V) measurements demonstrate that the performance of the NM‐based E‐B diode is comparable to that of a rigid diode on the as‐grown sample. The findings highlight the potential of the epitaxial lift‐off and transfer method for the heterogeneous integration of III–V semiconductor materials to overcome the lattice‐mismatch limitations.https://doi.org/10.1002/admi.202400588AlGaAs/GaAsPdiodesepitaxial lift‐offheterojunctionskelvin probe force microscopynanomembranes |
| spellingShingle | Haris Naeem Abbasi Moheb Sheikhi Donghyeok Kim Ranveer Singh Jiarui Gong Jie Zhou Qiming Zhang Shuoyang Qiu Carolina Adamo Patrick Marshall Clincy Cheung Vincent Gambin Zhenqiang Ma Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode Advanced Materials Interfaces AlGaAs/GaAsP diodes epitaxial lift‐off heterojunctions kelvin probe force microscopy nanomembranes |
| title | Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode |
| title_full | Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode |
| title_fullStr | Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode |
| title_full_unstemmed | Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode |
| title_short | Highly Strained AlGaAs‐GaAsP Nanomembranes‐Based High‐Performance Diode |
| title_sort | highly strained algaas gaasp nanomembranes based high performance diode |
| topic | AlGaAs/GaAsP diodes epitaxial lift‐off heterojunctions kelvin probe force microscopy nanomembranes |
| url | https://doi.org/10.1002/admi.202400588 |
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