Synthesis of Nanocrystalline Mn-Doped Bi<sub>2</sub>Te<sub>3</sub> Thin Films via Magnetron Sputtering
This study reports the structural and magnetic properties of Mn-doped <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>Bi</mi><mn>2</mn></msub><msub><m...
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Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2025-01-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/15/1/54 |
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Summary: | This study reports the structural and magnetic properties of Mn-doped <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>Bi</mi><mn>2</mn></msub><msub><mi>Te</mi><mn>3</mn></msub></mrow></semantics></math></inline-formula> thin films grown by magnetron sputtering. The films exhibit a ferromagnetic response that depends on the Mn doping concentration, as revealed by X-ray magnetic circular dichroism measurements. At an Mn concentration of ∼6.0%, a magnetic moment of (3.48 ± 0.25) <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="sans-serif">μ</mi><mi mathvariant="normal">B</mi></msub></semantics></math></inline-formula>/Mn was determined. Structural analysis indicated the presence of a secondary <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>MnTe</mi><mi>x</mi></msub></mrow></semantics></math></inline-formula> phase, which complicates the interpretation of the magnetic properties. Additionally, the incorporation of Mn ions within the van der Waals gap and substitutional doping on Bi sites contributes to the observed complex magnetic properties. Intriguingly, a decrease in magnetic moment per Mn was observed with increasing Mn concentration, which is consistent with the formation of the intrinsic magnetic topological insulator <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>MnBi</mi><mn>2</mn></msub><msub><mi>Te</mi><mn>4</mn></msub></mrow></semantics></math></inline-formula>. |
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ISSN: | 2073-4352 |