Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications
Abstract Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D...
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2025-06-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-025-01874-2 |
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| Summary: | Abstract Quasi-two-dimensional (quasi-2D) metal halide perovskite (MHP) ferroelectrics, characterized by spontaneous polarization and semiconducting properties, hold promise for functional photoferroelectrics in applications such as optical storage and in-memory computing. However, typical quasi-2D perovskite films contain multiple quantum wells with random width distribution, which degrade optoelectronic properties and spontaneous polarization. Here, we introduce phase-pure quantum wells with uniform well width by incorporating the inorganic salt MnBr2, which effectively controls crystallization kinetics and restricts the nucleation of high n-phases, producing high-quality films. The resulting (BA)2CsPb2Br7 (BA = C4H9NH3) film demonstrates ferroelectric hysteresis behavior, clear in-plane ferroelectric domain switching, and a high photoluminescence quantum efficiency (PLQE) of 88.7%. Significantly, we observed a nonvolatile, reversible in situ photoluminescence (PL) modulation of Mn2+ in this ferroelectric MHP film under an applied electric field, attributed to lattice distortion from ferroelectric polarization orientation. These findings enabled the development of a simple system comprising gallium nitride (GaN) light emitting diodes (LEDs) and ferroelectric films to implement multi-state signal encoding and a logic AND gate. This work advances the fabrication of efficient ferroelectric MHP films and highlights their potential for advanced optoelectronic applications. |
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| ISSN: | 2047-7538 |