Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission
InN and InGaN/GaN multi-quantum wells (MQWs) were subjected to Swift Heavy Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. InN shows a remarkable sensitivity towards track formation with a material decomposit...
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| Main Authors: | , , , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-03-01
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| Series: | Nano Trends |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666978125000078 |
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| Summary: | InN and InGaN/GaN multi-quantum wells (MQWs) were subjected to Swift Heavy Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. InN shows a remarkable sensitivity towards track formation with a material decomposition experimentally evidenced by means of Electron Energy Loss Spectroscopy. The MQWs material shows higher stability with negligible GaN/InGaN interface intermixing along the SHI tracks. This intermixing, proposed for mitigating polarization effects in InGaN/GaN-based light emitting diodes (LED), was achieved by track-free SHI irradiation. This was combined with low temperature thermal treatment at 450 °C with the aim to both create a compositional gradient at the MQWs interfaces and preserving the material luminescence. The obtained results pave the way for the use of SHI irradiation for efficient green light emission of InGaN/GaN-based LED. |
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| ISSN: | 2666-9781 |