Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon
Abstract This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202500046 |
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