Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Dopant Diffusion‐Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon

Abstract This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon...

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Bibliographic Details
Main Authors: Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
Series:Advanced Electronic Materials
Subjects:
dopant diffusion
failure analysis (FA)
heavily doped polysilicon oxidation
stacked dielectric
reliability
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Online Access:https://doi.org/10.1002/aelm.202500046
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https://doi.org/10.1002/aelm.202500046

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