Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination

Abstract One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering...

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Main Authors: Zhiqi Li, Qi Wei, Yu Wang, Cong Tao, Yatao Zou, Xiaowang Liu, Ziwei Li, Zhongbin Wu, Mingjie Li, Wenbin Guo, Gang Li, Weidong Xu, Feng Gao
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-56001-x
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author Zhiqi Li
Qi Wei
Yu Wang
Cong Tao
Yatao Zou
Xiaowang Liu
Ziwei Li
Zhongbin Wu
Mingjie Li
Wenbin Guo
Gang Li
Weidong Xu
Feng Gao
author_facet Zhiqi Li
Qi Wei
Yu Wang
Cong Tao
Yatao Zou
Xiaowang Liu
Ziwei Li
Zhongbin Wu
Mingjie Li
Wenbin Guo
Gang Li
Weidong Xu
Feng Gao
author_sort Zhiqi Li
collection DOAJ
description Abstract One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering from severe current-efficiency roll-off under intensive electrical excitations. Here, we demonstrate bright PeLEDs, with a peak radiance of 2409 W sr−1 m−2 and negligible current-efficiency roll-off, maintaining high external quantum efficiency over 20% even at current densities as high as 2270 mA cm−2. This significant improvement is achieved through the incorporation of electron-withdrawing trifluoroacetate anions into three-dimensional perovskite emitters, resulting in retarded Auger recombination due to a decoupled electron-hole wavefunction. Trifluoroacetate anions can additionally alter the crystallization dynamics and inhibit halide migration, facilitating charge injection balance and improving the tolerance of perovskites under high voltages. Our findings shed light on a promising future for perovskite emitters in high-power light-emitting applications, including laser diodes.
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institution Kabale University
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publishDate 2025-01-01
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spelling doaj-art-e20c76891c8b4473b7be2e2909d9db872025-01-26T12:40:32ZengNature PortfolioNature Communications2041-17232025-01-011611910.1038/s41467-025-56001-xHighly bright perovskite light-emitting diodes enabled by retarded Auger recombinationZhiqi Li0Qi Wei1Yu Wang2Cong Tao3Yatao Zou4Xiaowang Liu5Ziwei Li6Zhongbin Wu7Mingjie Li8Wenbin Guo9Gang Li10Weidong Xu11Feng Gao12Department of Physics, Chemistry and Biology (IFM), Linköping UniversityDepartment of Applied Physics, The Hong Kong Polytechnic UniversityDepartment of Physics, Chemistry and Biology (IFM), Linköping UniversityFrontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical UniversityFrontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical UniversityFrontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical UniversityHunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan UniversityFrontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical UniversityDepartment of Applied Physics, The Hong Kong Polytechnic UniversityState Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin UniversityDepartment of Electrical and Electronic Engineering, Photonic Research Institute (PRI), Research Institute of Smart Energy (RISE), The Hong Kong Polytechnic UniversityFrontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical UniversityDepartment of Physics, Chemistry and Biology (IFM), Linköping UniversityAbstract One of the key advantages of perovskite light-emitting diodes (PeLEDs) is their potential to achieve high performance at much higher current densities compared to conventional solution-processed emitters. However, state-of-the-art PeLEDs have not yet reached this potential, often suffering from severe current-efficiency roll-off under intensive electrical excitations. Here, we demonstrate bright PeLEDs, with a peak radiance of 2409 W sr−1 m−2 and negligible current-efficiency roll-off, maintaining high external quantum efficiency over 20% even at current densities as high as 2270 mA cm−2. This significant improvement is achieved through the incorporation of electron-withdrawing trifluoroacetate anions into three-dimensional perovskite emitters, resulting in retarded Auger recombination due to a decoupled electron-hole wavefunction. Trifluoroacetate anions can additionally alter the crystallization dynamics and inhibit halide migration, facilitating charge injection balance and improving the tolerance of perovskites under high voltages. Our findings shed light on a promising future for perovskite emitters in high-power light-emitting applications, including laser diodes.https://doi.org/10.1038/s41467-025-56001-x
spellingShingle Zhiqi Li
Qi Wei
Yu Wang
Cong Tao
Yatao Zou
Xiaowang Liu
Ziwei Li
Zhongbin Wu
Mingjie Li
Wenbin Guo
Gang Li
Weidong Xu
Feng Gao
Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
Nature Communications
title Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
title_full Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
title_fullStr Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
title_full_unstemmed Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
title_short Highly bright perovskite light-emitting diodes enabled by retarded Auger recombination
title_sort highly bright perovskite light emitting diodes enabled by retarded auger recombination
url https://doi.org/10.1038/s41467-025-56001-x
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