Fabrication of Low-Power Consumption Hydrogen Sensor Based on TiO<sub>x</sub>/Pt Nanocontacts via Local Atom Migration
Hydrogen (H<sub>2</sub>) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H<sub>2</sub> sensors has been shown to be improved by the incorporation of TiO<sub>2</sub> n...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-07-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/15/15/1154 |
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| Summary: | Hydrogen (H<sub>2</sub>) gas sensors are essential for detecting leaks and ensuring safety, thereby supporting the broader adoption of hydrogen energy. The performance of H<sub>2</sub> sensors has been shown to be improved by the incorporation of TiO<sub>2</sub> nanostructures. The key findings are summarized as follows: (1) Resistive random-access memory (ReRAM) technology was used to fabricate extremely compact H<sub>2</sub> sensors via various forming techniques, and substantial sensor performance enhancement was investigated. (2) A nanocontact composed of titanium oxide (TiO<sub>x</sub>)/platinum (Pt) was subjected to various forming operations to establish a Schottky junction with a nanogap structure on a tantalum oxide (Ta<sub>2</sub>O<sub>5</sub>) layer, and its properties were assessed. (3) When the Pt electrode was on the positive side during the forming operation used for ReRAM technology, a Pt nanopillar structure was produced. By contrast, when the forming operation was conducted with a positive bias on the TiO<sub>x</sub> side, a mixed oxide film of Ta and Ti was produced, which indicates local Ta doping into the TiO<sub>x</sub>. A sensor response of over 1000 times was achieved at a minimal voltage of 1 mV at room temperature. (4) This sensor fabrication technology based on the forming operation is promising for the development of low-power consumption sensors. |
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| ISSN: | 2079-4991 |