Composition Determination from Strain Relaxation in 4D-STEM

Composition determination with high spatial resolution is crucial for device engineering of electronic and optoelectronic systems. While scanning transmission electron microscopy (STEM) can infer material composition from strain with high precision, multiple scattering effects (dynamic diffraction)...

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Main Authors: F. Otto, L. Niermann, T. Niermann, M. Lehmann
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:Applied Physics Express
Subjects:
Online Access:https://doi.org/10.35848/1882-0786/ade41b
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author F. Otto
L. Niermann
T. Niermann
M. Lehmann
author_facet F. Otto
L. Niermann
T. Niermann
M. Lehmann
author_sort F. Otto
collection DOAJ
description Composition determination with high spatial resolution is crucial for device engineering of electronic and optoelectronic systems. While scanning transmission electron microscopy (STEM) can infer material composition from strain with high precision, multiple scattering effects (dynamic diffraction) often hinder accurate evaluation. This challenge is amplified by the inevitable relaxation of strain at the surfaces of thin TEM lamellae, leading to variations in dynamic diffraction patterns. Here, we introduce a method that directly exploits these variations from surface relaxation to extract composition, lamella thickness, and width of a quantum well within a known substrate, all from a single 4D-STEM measurement.
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publishDate 2025-01-01
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spelling doaj-art-e1b5b747c8c24c95a841a9c2e85e2abd2025-08-20T03:26:34ZengIOP PublishingApplied Physics Express1882-07862025-01-0118606550210.35848/1882-0786/ade41bComposition Determination from Strain Relaxation in 4D-STEMF. Otto0L. Niermann1https://orcid.org/0009-0005-1584-8092T. Niermann2https://orcid.org/0009-0007-6251-8891M. Lehmann3Technische Universität Berlin , Institut für Physik und Astronomie, Strasse des 17. Juni 135, 10623 Berlin, GermanyTechnische Universität Berlin , Institut für Physik und Astronomie, Strasse des 17. Juni 135, 10623 Berlin, GermanyTechnische Universität Berlin , Institut für Physik und Astronomie, Strasse des 17. Juni 135, 10623 Berlin, GermanyTechnische Universität Berlin , Institut für Physik und Astronomie, Strasse des 17. Juni 135, 10623 Berlin, GermanyComposition determination with high spatial resolution is crucial for device engineering of electronic and optoelectronic systems. While scanning transmission electron microscopy (STEM) can infer material composition from strain with high precision, multiple scattering effects (dynamic diffraction) often hinder accurate evaluation. This challenge is amplified by the inevitable relaxation of strain at the surfaces of thin TEM lamellae, leading to variations in dynamic diffraction patterns. Here, we introduce a method that directly exploits these variations from surface relaxation to extract composition, lamella thickness, and width of a quantum well within a known substrate, all from a single 4D-STEM measurement.https://doi.org/10.35848/1882-0786/ade41bComposition Determination4D-STEMHeterointerfacesDynamic DiffractionStrainTransmission Electron Microscopy
spellingShingle F. Otto
L. Niermann
T. Niermann
M. Lehmann
Composition Determination from Strain Relaxation in 4D-STEM
Applied Physics Express
Composition Determination
4D-STEM
Heterointerfaces
Dynamic Diffraction
Strain
Transmission Electron Microscopy
title Composition Determination from Strain Relaxation in 4D-STEM
title_full Composition Determination from Strain Relaxation in 4D-STEM
title_fullStr Composition Determination from Strain Relaxation in 4D-STEM
title_full_unstemmed Composition Determination from Strain Relaxation in 4D-STEM
title_short Composition Determination from Strain Relaxation in 4D-STEM
title_sort composition determination from strain relaxation in 4d stem
topic Composition Determination
4D-STEM
Heterointerfaces
Dynamic Diffraction
Strain
Transmission Electron Microscopy
url https://doi.org/10.35848/1882-0786/ade41b
work_keys_str_mv AT fotto compositiondeterminationfromstrainrelaxationin4dstem
AT lniermann compositiondeterminationfromstrainrelaxationin4dstem
AT tniermann compositiondeterminationfromstrainrelaxationin4dstem
AT mlehmann compositiondeterminationfromstrainrelaxationin4dstem