Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process
In this study, the CuIn(Ga)Se2 (CIGS) crystalline quality and MoSe2 thickness of films produced by the rapid thermal selenization process under various selenization pressures were investigated. When the selenization pressure increased from 48 Pa to 1.45 × 104 Pa, the CIGS films were smooth and unifo...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/253285 |
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| author | Wei-Ting Lin Shih-Hao Chan Shao-Ze Tseng Jhih-Jian He Sheng-Hui Chen Ruei-Fu Shih Chien-Wei Tseng Tomi T. Li Sung-Cheng Hu Wan-Xuan Peng Yung-Tien Lu |
| author_facet | Wei-Ting Lin Shih-Hao Chan Shao-Ze Tseng Jhih-Jian He Sheng-Hui Chen Ruei-Fu Shih Chien-Wei Tseng Tomi T. Li Sung-Cheng Hu Wan-Xuan Peng Yung-Tien Lu |
| author_sort | Wei-Ting Lin |
| collection | DOAJ |
| description | In this study, the CuIn(Ga)Se2 (CIGS) crystalline quality and MoSe2 thickness of films produced by the rapid thermal selenization process under various selenization pressures were investigated. When the selenization pressure increased from 48 Pa to 1.45 × 104 Pa, the CIGS films were smooth and uniform with large crystals of varying sizes. However, the MoSe2 thicknesses increased from 50 nm to 2,109 nm, which created increased contact resistivity for the CIGS/MoSe2/Mo structures. The efficiency of CIGS solar cells could be increased from 1.43% to 4.62% due to improvement in the CIGS crystalline quality with increasing selenization pressure from 48 Pa to 1.02 × 103 Pa. In addition, the CIGS crystalline quality and MoSe2 thickness were modified by the pressure released valve (PRV) selenization process method. The crystalline qualities of the CIGS films were similarly affected by the selenization pressure at 1.02 × 103 Pa in the PRV selenization method and the MoSe2 thicknesses were reduced from 1,219 nm to 703 nm. A higher efficiency of 5.2% was achieved with the thinner MoSe2 obtained by using the PRV selenization method. |
| format | Article |
| id | doaj-art-e1ac3c7c476e4d8cb99f8dacc57150a6 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-e1ac3c7c476e4d8cb99f8dacc57150a62025-02-03T01:29:17ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/253285253285Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal ProcessWei-Ting Lin0Shih-Hao Chan1Shao-Ze Tseng2Jhih-Jian He3Sheng-Hui Chen4Ruei-Fu Shih5Chien-Wei Tseng6Tomi T. Li7Sung-Cheng Hu8Wan-Xuan Peng9Yung-Tien Lu10Department of Optics and Photonics, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Optics and Photonics, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Mechanical Engineering, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Mechanical Engineering, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanDepartment of Mechanical Engineering, National Central University, 300 Chung-da Road, Chung-Li, Taoyuan 32001, TaiwanChemical System Research Division, Chung-Shan Institute of Science & Technology, Lung-Tan, Taoyuan 32599, TaiwanChemical System Research Division, Chung-Shan Institute of Science & Technology, Lung-Tan, Taoyuan 32599, TaiwanChemical System Research Division, Chung-Shan Institute of Science & Technology, Lung-Tan, Taoyuan 32599, TaiwanIn this study, the CuIn(Ga)Se2 (CIGS) crystalline quality and MoSe2 thickness of films produced by the rapid thermal selenization process under various selenization pressures were investigated. When the selenization pressure increased from 48 Pa to 1.45 × 104 Pa, the CIGS films were smooth and uniform with large crystals of varying sizes. However, the MoSe2 thicknesses increased from 50 nm to 2,109 nm, which created increased contact resistivity for the CIGS/MoSe2/Mo structures. The efficiency of CIGS solar cells could be increased from 1.43% to 4.62% due to improvement in the CIGS crystalline quality with increasing selenization pressure from 48 Pa to 1.02 × 103 Pa. In addition, the CIGS crystalline quality and MoSe2 thickness were modified by the pressure released valve (PRV) selenization process method. The crystalline qualities of the CIGS films were similarly affected by the selenization pressure at 1.02 × 103 Pa in the PRV selenization method and the MoSe2 thicknesses were reduced from 1,219 nm to 703 nm. A higher efficiency of 5.2% was achieved with the thinner MoSe2 obtained by using the PRV selenization method.http://dx.doi.org/10.1155/2014/253285 |
| spellingShingle | Wei-Ting Lin Shih-Hao Chan Shao-Ze Tseng Jhih-Jian He Sheng-Hui Chen Ruei-Fu Shih Chien-Wei Tseng Tomi T. Li Sung-Cheng Hu Wan-Xuan Peng Yung-Tien Lu Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process International Journal of Photoenergy |
| title | Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process |
| title_full | Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process |
| title_fullStr | Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process |
| title_full_unstemmed | Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process |
| title_short | Manipulation of MoSe2 Films on CuIn(Ga)Se2 Solar Cells during Rapid Thermal Process |
| title_sort | manipulation of mose2 films on cuin ga se2 solar cells during rapid thermal process |
| url | http://dx.doi.org/10.1155/2014/253285 |
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