A Two-Dimensional (2D) Potential Distribution Model for the Short Gate-Length Ion-Implanted GaAs Mesfets Under Dark and Illuminated Conditions
An analytical 2D model to predict the potential distribution of short-channel ion-implanted GaAs MESFETs has been presented. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson’s equation in conjunction with suitable boundary condition...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1%28Part5%29_0868-0877.pdf |
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