High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity

High-Power (>300 mW) On-Chip Laser With Passively Aligned Silicon-Nitride Waveguide DBR Cavity

We demonstrate a high-power on-chip 1550-nm laser implemented by passive flip-chip integration of a curved-channel, double-pass InGaAsP/InP slab-coupled optical waveguide amplifier (SCOWA) onto a photonic integrated circuit (PIC) containing a silicon nitride (SiN) waveguide and distributed Bragg ref...

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Bibliographic Details
Main Authors: Dave Kharas, Jason J. Plant, William Loh, Reuel B. Swint, Suraj Bramhavar, Christopher Heidelberger, Siva Yegnanarayanan, Paul W. Juodawlkis
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Photonics Journal
Subjects:
Hybrid integration
SiN photonics
external cavity laser
high power laser
Online Access:https://ieeexplore.ieee.org/document/9260967/
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