280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate
Abstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300‐GHz...
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| Format: | Article |
| Language: | English |
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Wiley
2024-12-01
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| Series: | IET Microwaves, Antennas & Propagation |
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| Online Access: | https://doi.org/10.1049/mia2.12532 |
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| author | Haiyan Lu Jixin Chen Pinpin Yan Si‐Yuan Tang Yu Zheng Sidou Zheng Wei Cheng Yan Sun Peigen Zhou Long Chang Longzhu Cai Zhi Hao Jiang Hongqi Tao Tangsheng Chen Wei Hong |
| author_facet | Haiyan Lu Jixin Chen Pinpin Yan Si‐Yuan Tang Yu Zheng Sidou Zheng Wei Cheng Yan Sun Peigen Zhou Long Chang Longzhu Cai Zhi Hao Jiang Hongqi Tao Tangsheng Chen Wei Hong |
| author_sort | Haiyan Lu |
| collection | DOAJ |
| description | Abstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300‐GHz power amplifier and on‐chip antenna are realised in InP technology for high output power and small die size. The low‐cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on‐chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate. |
| format | Article |
| id | doaj-art-e0c36362904046829b5e0f2d579edfa7 |
| institution | OA Journals |
| issn | 1751-8725 1751-8733 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Microwaves, Antennas & Propagation |
| spelling | doaj-art-e0c36362904046829b5e0f2d579edfa72025-08-20T01:59:56ZengWileyIET Microwaves, Antennas & Propagation1751-87251751-87332024-12-01181287888410.1049/mia2.12532280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rateHaiyan Lu0Jixin Chen1Pinpin Yan2Si‐Yuan Tang3Yu Zheng4Sidou Zheng5Wei Cheng6Yan Sun7Peigen Zhou8Long Chang9Longzhu Cai10Zhi Hao Jiang11Hongqi Tao12Tangsheng Chen13Wei Hong14The State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaNational Key Laboratory of Solid‐State Microwave Devices and Circuits Nanjing Electronics Devices Institute Nanjing ChinaNational Key Laboratory of Solid‐State Microwave Devices and Circuits Nanjing Electronics Devices Institute Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaNational Key Laboratory of Solid‐State Microwave Devices and Circuits Nanjing Electronics Devices Institute Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaNational Key Laboratory of Solid‐State Microwave Devices and Circuits Nanjing Electronics Devices Institute Nanjing ChinaNational Key Laboratory of Solid‐State Microwave Devices and Circuits Nanjing Electronics Devices Institute Nanjing ChinaThe State Key Laboratory of Millimeter Waves School of Information Science and Engineering Southeast University Nanjing ChinaAbstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300‐GHz power amplifier and on‐chip antenna are realised in InP technology for high output power and small die size. The low‐cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on‐chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate.https://doi.org/10.1049/mia2.12532BiCMOS integrated circuitsIII‐V semiconductorssystem‐on‐chiptransmitters |
| spellingShingle | Haiyan Lu Jixin Chen Pinpin Yan Si‐Yuan Tang Yu Zheng Sidou Zheng Wei Cheng Yan Sun Peigen Zhou Long Chang Longzhu Cai Zhi Hao Jiang Hongqi Tao Tangsheng Chen Wei Hong 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate IET Microwaves, Antennas & Propagation BiCMOS integrated circuits III‐V semiconductors system‐on‐chip transmitters |
| title | 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate |
| title_full | 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate |
| title_fullStr | 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate |
| title_full_unstemmed | 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate |
| title_short | 280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate |
| title_sort | 280 300 ghz sige inp hybrid integrated transmitter with 21 9 dbm eirp and 10 gbps data rate |
| topic | BiCMOS integrated circuits III‐V semiconductors system‐on‐chip transmitters |
| url | https://doi.org/10.1049/mia2.12532 |
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