Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells
In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of differ...
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| Format: | Article |
| Language: | English |
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Wiley
2019-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2019/5357370 |
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| author | Jiaxing Ye Bin Ai Jingsheng Jin Depeng Qiu Runxiong Liang Hui Shen |
| author_facet | Jiaxing Ye Bin Ai Jingsheng Jin Depeng Qiu Runxiong Liang Hui Shen |
| author_sort | Jiaxing Ye |
| collection | DOAJ |
| description | In this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of different regeneration processes (temperature, time, and injection current) on the anti-light-induced degradation (anti-LID) performance of the PERC solar cells were investigated. The results show that under the condition of 10 A injection current and 30 min processing time, the optimal processing temperature is about 180°C for PERC solar cells to obtain the best anti-LID performance. Under the conditions of a temperature of 180°C, an injection current of 10 A, and a processing time of 0-30 min, the anti-LID performance of the PERC solar cells is enhanced with the increase in the processing time. When the processing time is 20 and 30 min, the efficiency, the short-circuit current, and the open-circuit voltage of the processed PERC solar cells are slightly higher than the initial values before the regeneration and remain stable in the subsequent 12-hour light degradation process at 45°C and 1-sun illumination. At a temperature of 180°C and a processing time of 30 min, the injection current of 6 A is enough to obtain a good regeneration effect, but the optimal injection current is around 10 A. |
| format | Article |
| id | doaj-art-e08485d923d6402f8236e7bccb95b8ea |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-e08485d923d6402f8236e7bccb95b8ea2025-02-03T06:11:32ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2019-01-01201910.1155/2019/53573705357370Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar CellsJiaxing Ye0Bin Ai1Jingsheng Jin2Depeng Qiu3Runxiong Liang4Hui Shen5School of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, ChinaJinko Solar Holding Co. Ltd., Haining 314416, ChinaSchool of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, ChinaSchool of Materials Science and Engineering, Guangdong Provincial Key Laboratory of Photovoltaic Technology, Sun Yat-sen University, Guangzhou 510006, ChinaIn this paper, 156 mm×156 mm boron-doped Czochralski silicon (Cz-Si) wafers were fabricated into PERC solar cells by using the industrial standard process; then, the as-prepared PERC solar cells were treated by the regeneration process using electrical injection and heating and the effects of different regeneration processes (temperature, time, and injection current) on the anti-light-induced degradation (anti-LID) performance of the PERC solar cells were investigated. The results show that under the condition of 10 A injection current and 30 min processing time, the optimal processing temperature is about 180°C for PERC solar cells to obtain the best anti-LID performance. Under the conditions of a temperature of 180°C, an injection current of 10 A, and a processing time of 0-30 min, the anti-LID performance of the PERC solar cells is enhanced with the increase in the processing time. When the processing time is 20 and 30 min, the efficiency, the short-circuit current, and the open-circuit voltage of the processed PERC solar cells are slightly higher than the initial values before the regeneration and remain stable in the subsequent 12-hour light degradation process at 45°C and 1-sun illumination. At a temperature of 180°C and a processing time of 30 min, the injection current of 6 A is enough to obtain a good regeneration effect, but the optimal injection current is around 10 A.http://dx.doi.org/10.1155/2019/5357370 |
| spellingShingle | Jiaxing Ye Bin Ai Jingsheng Jin Depeng Qiu Runxiong Liang Hui Shen Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells International Journal of Photoenergy |
| title | Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells |
| title_full | Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells |
| title_fullStr | Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells |
| title_full_unstemmed | Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells |
| title_short | Study on the Electrical Injection Regeneration of Industrialized B-Doped Czochralski Silicon PERC Solar Cells |
| title_sort | study on the electrical injection regeneration of industrialized b doped czochralski silicon perc solar cells |
| url | http://dx.doi.org/10.1155/2019/5357370 |
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