On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Featured with light emission and detection coexistence phenomenon, nitride-based multiple-quantum-well (MQW) diodes integrated chip has been proven to be an attractive structure for application prospects in various fields such as lighting, sensing, optical communication, and other fields. However, m...

Full description

Saved in:
Bibliographic Details
Main Authors: Feifei Qin, Xueyao Lu, Xiaoxuan Wang, Chunxiang Guo, Jiaqi Wu, Xuefeng Fan, Mingming Jiang, Peng Wan, Junfeng Lu, Yongjin Wang, Gangyi Zhu
Format: Article
Language:English
Published: Elsevier 2024-12-01
Series:Chip
Subjects:
Three-dimensional device
Self-warped structures
Single cantilever
GaN light-emitting diode
Directional emission and detection
Online Access:http://www.sciencedirect.com/science/article/pii/S2709472324000339
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

http://www.sciencedirect.com/science/article/pii/S2709472324000339

Similar Items