Comparison of Thermal Evaporation and Plasma Assisted Thermal Evaporation Processes for Deposition of Tin Oxide Thin Films
Tin oxide (SnO2) thin films are of great interest in optoelectronics industries due to their promising properties such as conductivity and optical transparency in visible-infrared (VIS-IR) region. Improvement in these two key properties of SnO2 is of technological importance. In order to find ways f...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
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| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%202/articles/jnep_2011_V3_N1(Part2)_318-322.pdf |
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| Summary: | Tin oxide (SnO2) thin films are of great interest in optoelectronics industries due to their promising properties such as conductivity and optical transparency in visible-infrared (VIS-IR) region. Improvement in these two key properties of SnO2 is of technological importance. In order to find ways for these improvements in the present study, SnO2 thin films have been prepared by Thermal Evaporation (TE) in oxygen (O2) partial pressure and Plasma Assisted Thermal Evaporation (PATE) using RF (13.56 MHz) O2 plasma. Optical, structural, compositional and electrical properties of the deposited films have been investigated by varying substrate temperature in range of 250-350 °C keeping other process parameters constant. The optical transmission spectra measured in VIS-IR region of films deposited by PATE have higher transparency (~ 80-90 %) in comparison to the films grown by TE (~ 60-70 %). X-ray Diffraction (XRD) study reveal SnO & SnO2 phases present in the film. Also X-ray Photoelectron Spectrosocpy (XPS) analysis showed SnO2 – x as the only content, which is in agreement to XRD results. Surface morphology study by Scanning Electron Microscopy (SEM) shows more needle shape grains in case of films deposited by TE as compared to PATE grown films. Both types of the films were subjected to Four-probe method for the measurement of resistivity, which is in the order of 10 – 4 Ω-cm and 10 – 3 Ω-cm for PATE and TE grown respectively. |
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| ISSN: | 2077-6772 |