Preparation and photoelectric properties of Si:B nanowires with thermal evaporation method.

Preparation and photoelectric properties of Si:B nanowires with thermal evaporation method.

We have successfully prepared a significant number of nanowires from non-toxic silicon sources. Compared to the SiO silicon source used in most other articles, our preparation method is much safer. It provides a simple and harmless new preparation method for the preparation of silicon nanowires. SiN...

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Bibliographic Details
Main Authors: Yang Feng, Ping Liang, Ziwen Xia, Weiye Yang, Hongyan Peng, Shihua Zhao
Format: Article
Language:English
Published: Public Library of Science (PLoS) 2025-01-01
Series:PLoS ONE
Online Access:https://doi.org/10.1371/journal.pone.0316576
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