Molecular beam epitaxial In2Te3 electronic devices
Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes...
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| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-11-01
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| Series: | NPG Asia Materials |
| Online Access: | https://doi.org/10.1038/s41427-024-00578-0 |
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| _version_ | 1832594656750206976 |
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| author | Imhwan Kim Jinseok Ryu Eunsu Lee Sangmin Lee Seokje Lee Wonwoo Suh Jamin Lee Miyoung Kim Hong seok Oh Gyu-Chul Yi |
| author_facet | Imhwan Kim Jinseok Ryu Eunsu Lee Sangmin Lee Seokje Lee Wonwoo Suh Jamin Lee Miyoung Kim Hong seok Oh Gyu-Chul Yi |
| author_sort | Imhwan Kim |
| collection | DOAJ |
| description | Abstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV. |
| format | Article |
| id | doaj-art-de5cfb0c427f4764975eeae2ac0fd9b1 |
| institution | Kabale University |
| issn | 1884-4057 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | NPG Asia Materials |
| spelling | doaj-art-de5cfb0c427f4764975eeae2ac0fd9b12025-01-19T12:28:40ZengNature PortfolioNPG Asia Materials1884-40572024-11-011611610.1038/s41427-024-00578-0Molecular beam epitaxial In2Te3 electronic devicesImhwan Kim0Jinseok Ryu1Eunsu Lee2Sangmin Lee3Seokje Lee4Wonwoo Suh5Jamin Lee6Miyoung Kim7Hong seok Oh8Gyu-Chul Yi9Department of Physics and Astronomy, Institute of Applied Physics, Seoul National UniversityDepartment of Material Science Engineering and Research Institute of Advanced Materials, Seoul National UniversityDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National UniversityDepartment of Material Science Engineering and Research Institute of Advanced Materials, Seoul National UniversityDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National UniversityDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National UniversityInterdisciplinary Program in Neuroscience, College of Science, Seoul National UniversityDepartment of Material Science Engineering and Research Institute of Advanced Materials, Seoul National UniversityDepartment of Physics and Department of Intelligent Semiconductors, Soongsil UniversityDepartment of Physics and Astronomy, Institute of Applied Physics, Seoul National UniversityAbstract We report on the electrical characteristics of field-effect transistors (FETs) and Schottky diodes based on In2Te3 grown on hexagonal boron nitride (h-BN) substrates utilizing molecular beam epitaxy (MBE). A two-step growth method was used to increase surface coverage and large grain sizes for high-quality In2Te3. Scanning transmission electron microscopy (STEM) imaging revealed an atomically clean and abrupt interface between the In2Te3 and h-BN substrates. Compared with the previously reported In2Te3 FETs, the MBE-grown In2Te3 FETs exhibited superior electrical properties, including a mobility of 6.07 cm2 V−1 s−1, a subthreshold swing close to 6 V dec−1, and an impressive on/off ratio of approximately 105. Furthermore, the Ti/In2Te3 Schottky diodes exhibit a low saturation current of 0.4 nA, an ideality factor of 26.7, and a Schottky barrier height of 0.68 eV.https://doi.org/10.1038/s41427-024-00578-0 |
| spellingShingle | Imhwan Kim Jinseok Ryu Eunsu Lee Sangmin Lee Seokje Lee Wonwoo Suh Jamin Lee Miyoung Kim Hong seok Oh Gyu-Chul Yi Molecular beam epitaxial In2Te3 electronic devices NPG Asia Materials |
| title | Molecular beam epitaxial In2Te3 electronic devices |
| title_full | Molecular beam epitaxial In2Te3 electronic devices |
| title_fullStr | Molecular beam epitaxial In2Te3 electronic devices |
| title_full_unstemmed | Molecular beam epitaxial In2Te3 electronic devices |
| title_short | Molecular beam epitaxial In2Te3 electronic devices |
| title_sort | molecular beam epitaxial in2te3 electronic devices |
| url | https://doi.org/10.1038/s41427-024-00578-0 |
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