Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels
This article evaluates the dynamic performance of high voltage Silicon and 4H-SiC NPN BJTs based on experimental measurements together with modeling through Silvaco TCAD to describe the charge transient dynamics. The measurements are performed with a DC-link voltage of 800 V at peak collector curren...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10833858/ |
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