Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) indirect detection normally requires additional circuits,...
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2025-01-01
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| author | Yansong Lu Yijun Ding Jia Li Hao Yin Xinlian Li Chong Zhu Xi Zhang |
| author_facet | Yansong Lu Yijun Ding Jia Li Hao Yin Xinlian Li Chong Zhu Xi Zhang |
| author_sort | Yansong Lu |
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| description | Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques. This paper proposes a high-efficiency datasheet-driven method for sensorless estimation utilizing the third-quadrant characteristics of MOSFETs. Without changing the existing hardware, the closure degree of MOS channels is controlled through a dual-gate bias (DGB) strategy to achieve reverse conduction in different patterns with body diodes. This method introduces a MOSFET operating current that TSEPs are equally sensitive to into the two-argument function, improving the complexity and accuracy. A two-stage current pulse is used to decouple the motor effect in various conduction modes, and the TSEP-combined temperature function is built dynamically by substituting the currents. Then, the junction temperature is estimated by the measured bus voltage and current. Its effectiveness was verified through spice model simulation and a test bench with a three-phase inverter. The average relative estimation error of the proposed method is below <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>7.2</mn><mo>%</mo></mrow></semantics></math></inline-formula> in centigrade. |
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| institution | Kabale University |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-01-01 |
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| spelling | doaj-art-dd69acb0ac32476b8b23dfad65e7b6142025-01-24T13:49:23ZengMDPI AGSensors1424-82202025-01-0125257110.3390/s25020571Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant CharacteristicsYansong Lu0Yijun Ding1Jia Li2Hao Yin3Xinlian Li4Chong Zhu5Xi Zhang6School of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Mechanical and Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSilicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters’ (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques. This paper proposes a high-efficiency datasheet-driven method for sensorless estimation utilizing the third-quadrant characteristics of MOSFETs. Without changing the existing hardware, the closure degree of MOS channels is controlled through a dual-gate bias (DGB) strategy to achieve reverse conduction in different patterns with body diodes. This method introduces a MOSFET operating current that TSEPs are equally sensitive to into the two-argument function, improving the complexity and accuracy. A two-stage current pulse is used to decouple the motor effect in various conduction modes, and the TSEP-combined temperature function is built dynamically by substituting the currents. Then, the junction temperature is estimated by the measured bus voltage and current. Its effectiveness was verified through spice model simulation and a test bench with a three-phase inverter. The average relative estimation error of the proposed method is below <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mn>7.2</mn><mo>%</mo></mrow></semantics></math></inline-formula> in centigrade.https://www.mdpi.com/1424-8220/25/2/571temperature monitoringmetal oxide semiconductor field-effect transistors (MOSFETs)silicon carbide (SiC)body diodethird-quadrant (3rd-quad) characteristicselectric vehicles (EVs) |
| spellingShingle | Yansong Lu Yijun Ding Jia Li Hao Yin Xinlian Li Chong Zhu Xi Zhang Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics Sensors temperature monitoring metal oxide semiconductor field-effect transistors (MOSFETs) silicon carbide (SiC) body diode third-quadrant (3rd-quad) characteristics electric vehicles (EVs) |
| title | Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics |
| title_full | Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics |
| title_fullStr | Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics |
| title_full_unstemmed | Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics |
| title_short | Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics |
| title_sort | sensorless junction temperature estimation of onboard sic mosfets using dual gate bias triggered third quadrant characteristics |
| topic | temperature monitoring metal oxide semiconductor field-effect transistors (MOSFETs) silicon carbide (SiC) body diode third-quadrant (3rd-quad) characteristics electric vehicles (EVs) |
| url | https://www.mdpi.com/1424-8220/25/2/571 |
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