A Physical Charge-Based Analytical Threshold Voltage Model for Cryogenic CMOS Design
This paper proposes a physical charge-based analytical MOSFET threshold voltage model that explicitly incorporates interface-trapped charges which have been identified as playing a dominant role in defining threshold voltage trends in deep cryogenic temperatures. The model retains standard threshold...
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| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10416243/ |
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