Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells
The GZO thin films were deposited on the polyimide (PI) substrates to investigate their properties for the possibly flexible applications. The effects of substrate temperature (from room temperature to 200°C) on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmiss...
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| Format: | Article |
| Language: | English |
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Wiley
2013-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2013/263213 |
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| author | Fang-Hsing Wang Cheng-Fu Yang Min-Chu Liu |
| author_facet | Fang-Hsing Wang Cheng-Fu Yang Min-Chu Liu |
| author_sort | Fang-Hsing Wang |
| collection | DOAJ |
| description | The GZO thin films were deposited on the polyimide (PI) substrates to investigate their properties for the possibly flexible applications. The effects of substrate temperature (from room temperature to 200°C) on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the GZO thin films on PI substrates were studied. The measured results showed that the substrate temperature had large effect on the characteristics of the GZO thin films. The cross-section observations really indicated that the GZO thin films deposited at 200°C and below had different crystalline structures. The value variations in the films’ optical band gap (Eg) of the GZO thin films were evaluated from plots of (αhν)2=c(hν-Eg), revealing that the measured Eg values increased with increasing deposition temperature. Finally, the prepared GZO thin films were also used as the transparent electrodes to fabricate the α-Si amorphous silicon thin-film solar cells on the flexible PI substrates, and the properties of which were also measured. We would also prove that substrate temperature of the GZO thin films had large effect on the characteristics of the fabricated α-Si amorphous silicon thin-film solar cells. |
| format | Article |
| id | doaj-art-da11a7c5105447f6b5aff80b44c5c23e |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2013-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-da11a7c5105447f6b5aff80b44c5c23e2025-02-03T01:03:29ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/263213263213Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar CellsFang-Hsing Wang0Cheng-Fu Yang1Min-Chu Liu2Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, TaiwanDepartment of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, TaiwanThe GZO thin films were deposited on the polyimide (PI) substrates to investigate their properties for the possibly flexible applications. The effects of substrate temperature (from room temperature to 200°C) on the surface and cross-session morphologies, X-ray diffraction pattern, optical transmission spectrum, carrier concentration, carrier mobility, and resistivity of the GZO thin films on PI substrates were studied. The measured results showed that the substrate temperature had large effect on the characteristics of the GZO thin films. The cross-section observations really indicated that the GZO thin films deposited at 200°C and below had different crystalline structures. The value variations in the films’ optical band gap (Eg) of the GZO thin films were evaluated from plots of (αhν)2=c(hν-Eg), revealing that the measured Eg values increased with increasing deposition temperature. Finally, the prepared GZO thin films were also used as the transparent electrodes to fabricate the α-Si amorphous silicon thin-film solar cells on the flexible PI substrates, and the properties of which were also measured. We would also prove that substrate temperature of the GZO thin films had large effect on the characteristics of the fabricated α-Si amorphous silicon thin-film solar cells.http://dx.doi.org/10.1155/2013/263213 |
| spellingShingle | Fang-Hsing Wang Cheng-Fu Yang Min-Chu Liu Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells International Journal of Photoenergy |
| title | Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells |
| title_full | Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells |
| title_fullStr | Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells |
| title_full_unstemmed | Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells |
| title_short | Using Flexible Polyimide as a Substrate to Deposit ZnO:Ga Thin Films and Fabricate p-i-n α-Si:H Thin-Film Solar Cells |
| title_sort | using flexible polyimide as a substrate to deposit zno ga thin films and fabricate p i n α si h thin film solar cells |
| url | http://dx.doi.org/10.1155/2013/263213 |
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