The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes
In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different me...
Saved in:
| Main Authors: | Ali Sadoun, Imad Kemerchou, S. Mansouri, M. Chellali |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
University of El Oued
2020-12-01
|
| Series: | International Journal of Energetica |
| Online Access: | https://www.ijeca.info/index.php/IJECA/article/view/137 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Optimizing charge transport in hybrid GaN-PEDOT:PSS/PMMADevice for advanced application
by: Makram A. Fakhri, et al.
Published: (2024-06-01) -
Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
by: Vishwajeet Maurya, et al.
Published: (2025-06-01) -
Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications
by: Sana Nasir, et al.
Published: (2025-06-01) -
Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
by: Changda Zheng, et al.
Published: (2013-01-01) -
Mitigation of Efficiency Droop in an Asymmetric GaN-Based High-Power Laser Diode With Sandwiched GaN/InAlN/GaN Lower Quantum Barrier
by: Tian Lan, et al.
Published: (2018-01-01)