The electrical properties of Au/GaN and PEDOT: PSS/GaN diodes
In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different me...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of El Oued
2020-12-01
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| Series: | International Journal of Energetica |
| Online Access: | https://www.ijeca.info/index.php/IJECA/article/view/137 |
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| Summary: | In the present paper, using a numerical simulator, the simulation of Au/n-GaN and PEDOT: PSS/GaN structures were performed in a temperature at room temperature. The electrical parameters: barrier height, ideality factor, shunt resistance series, and resistance have been calculated using different methods: conventional I-V, Norde, Chattopadhyay, and Mikhelashvili. Statistical analysis showed that the Au/GaN structure has a barrier height of (0.6 eV) which is higher compared with the PEDOT: PSS/GaN structure (0.72 eV) and ideality factor (1.88 and 2.26) respectively. The values of resistance shunt were increased from 77150.056 Ω to 11207586 Ω. It is observed that the leakage current increased from 6.64E-5 to 4.98926E-5A at −0.85 V. |
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| ISSN: | 2543-3717 |